Photonic device integration using MOCVD grown quantum dots

S. Mokkapati; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2006.4429877

Photonic device integration using MOCVD grown quantum dots

S. Mokkapati
, H. H. Tan
, C. Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area MOCVD is used to tune the bandgap of epitaxial layers for device integration.

Original language	English
Title of host publication	COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	53-54
Number of pages	2
ISBN (Print)	1424405785, 9781424405787
DOIs	https://doi.org/10.1109/COMMAD.2006.4429877
Publication status	Published - 1 Dec 2006
Externally published	Yes
Event	Conference on Optoelectronic and Microelectronic Materials and Devices 2006 - Perth, Australia Duration: 6 Dec 2006 → 8 Dec 2006 https://ieeexplore.ieee.org/xpl/conhome/4429844/proceeding (Proceedings)

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices 2006
Abbreviated title	COMMAD 2006
Country/Territory	Australia
City	Perth
Period	6/12/06 → 8/12/06
Internet address	https://ieeexplore.ieee.org/xpl/conhome/4429844/proceeding (Proceedings)

Keywords

Photonic device integration
Quantum-dots
Selective-area epitaxy

Access to Document

10.1109/COMMAD.2006.4429877

Cite this

Mokkapati, S., Tan, H. H., & Jagadish, C. (2006). Photonic device integration using MOCVD grown quantum dots. In COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices (pp. 53-54). (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/COMMAD.2006.4429877

Mokkapati, S. ; Tan, H. H. ; Jagadish, C. / Photonic device integration using MOCVD grown quantum dots. COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. IEEE, Institute of Electrical and Electronics Engineers, 2006. pp. 53-54 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

@inproceedings{47f33e2ac51b459ca4b252fe8be56079,

title = "Photonic device integration using MOCVD grown quantum dots",

abstract = "We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area MOCVD is used to tune the bandgap of epitaxial layers for device integration.",

keywords = "Photonic device integration, Quantum-dots, Selective-area epitaxy",

author = "S. Mokkapati and Tan, \{H. H.\} and C. Jagadish",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/COMMAD.2006.4429877",

language = "English",

isbn = "1424405785",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

pages = "53--54",

booktitle = "COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices",

address = "United States of America",

note = "Conference on Optoelectronic and Microelectronic Materials and Devices 2006, COMMAD 2006 ; Conference date: 06-12-2006 Through 08-12-2006",

url = "https://ieeexplore.ieee.org/xpl/conhome/4429844/proceeding",

}

Mokkapati, S, Tan, HH & Jagadish, C 2006, Photonic device integration using MOCVD grown quantum dots. in COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, IEEE, Institute of Electrical and Electronics Engineers, pp. 53-54, Conference on Optoelectronic and Microelectronic Materials and Devices 2006, Perth, Western Australia, Australia, 6/12/06. https://doi.org/10.1109/COMMAD.2006.4429877

Photonic device integration using MOCVD grown quantum dots. / Mokkapati, S.; Tan, H. H.; Jagadish, C.
COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. IEEE, Institute of Electrical and Electronics Engineers, 2006. p. 53-54 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

TY - GEN

T1 - Photonic device integration using MOCVD grown quantum dots

AU - Mokkapati, S.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area MOCVD is used to tune the bandgap of epitaxial layers for device integration.

AB - We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area MOCVD is used to tune the bandgap of epitaxial layers for device integration.

KW - Photonic device integration

KW - Quantum-dots

KW - Selective-area epitaxy

UR - https://www.scopus.com/pages/publications/44849113904

U2 - 10.1109/COMMAD.2006.4429877

DO - 10.1109/COMMAD.2006.4429877

M3 - Conference Paper

AN - SCOPUS:44849113904

SN - 1424405785

SN - 9781424405787

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 53

EP - 54

BT - COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices 2006

Y2 - 6 December 2006 through 8 December 2006

ER -

Mokkapati S, Tan HH, Jagadish C. Photonic device integration using MOCVD grown quantum dots. In COMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. IEEE, Institute of Electrical and Electronics Engineers. 2006. p. 53-54. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2006.4429877

Photonic device integration using MOCVD grown quantum dots

Abstract

Publication series

Conference

Keywords

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