Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface

Sunghee Lee, Mark M. Banaszak Holl, Wei Hsiu Hung, F. R. McFeely

Research output: Contribution to journalArticleResearchpeer-review

7 Citations (Scopus)

Abstract

Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed.

Original languageEnglish
Pages (from-to)1081-1083
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number8
DOIs
Publication statusPublished - 1 Dec 1996
Externally publishedYes

Cite this

Lee, Sunghee ; Banaszak Holl, Mark M. ; Hung, Wei Hsiu ; McFeely, F. R. / Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface. In: Applied Physics Letters. 1996 ; Vol. 68, No. 8. pp. 1081-1083.
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Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface. / Lee, Sunghee; Banaszak Holl, Mark M.; Hung, Wei Hsiu; McFeely, F. R.

In: Applied Physics Letters, Vol. 68, No. 8, 01.12.1996, p. 1081-1083.

Research output: Contribution to journalArticleResearchpeer-review

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T1 - Photoemission assignments of HxSiO4-x fragments at the Si/SiOx interface

AU - Lee, Sunghee

AU - Banaszak Holl, Mark M.

AU - Hung, Wei Hsiu

AU - McFeely, F. R.

PY - 1996/12/1

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