Photoelectrical characteristics of a C/CNx multiwalled nanotube

Kai Xiao, Ying Fu, Yunqi Liu, Gui Yu, Jin Zhai, Lei Jiang, Wenping Hu, Zhigang Shuai, Yi Luo, Daoben Zhu

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13 Citations (Scopus)

Abstract

A nanotube diode fabricated from a single C/CNx multiwalled nanotube exhibits a large photocurrent and a large photovoltage under illumination. The current-voltage (I-V) characteristics of the diode indicate a clear rectification effect. By comparing the I-V characteristics of C, CN x, and C/CMx nanotube diodes, we show that the rectifying characteristics of the C/CMx diode arises from the molecular junction formed at the C/CNx interface where the C and CNx segments are chemically bonded. External radiation photochemically generates electrons and holes in the C/CNx nanotube, producing a large photocurrent because of the influence of the strong electric field in the vicinity of the C/CNx junction. These unique photoresponsive characteristics of C/CNx nanotube junction diodes points to potential applications such as photovoltaic devices and photodiodes.

Original languageEnglish
Pages (from-to)2842-2846
Number of pages5
JournalAdvanced Functional Materials
Volume17
Issue number15
DOIs
Publication statusPublished - 15 Oct 2007
Externally publishedYes

Cite this

Xiao, K., Fu, Y., Liu, Y., Yu, G., Zhai, J., Jiang, L., Hu, W., Shuai, Z., Luo, Y., & Zhu, D. (2007). Photoelectrical characteristics of a C/CNx multiwalled nanotube. Advanced Functional Materials, 17(15), 2842-2846. https://doi.org/10.1002/adfm.200600830