Abstract
Perimeter recombination causes significant efficiency loss in solar cells. This paper presents a method to quantify perimeter recombination via luminescence imaging for silicon solar cells embedded within the wafer. The validity of the method is discussed and verified via 2-D semiconductor simulation. We demonstrate the method to be sufficiently sensitive in that it can quantify perimeter recombination even in a solar cell where no obvious deviation from ideality is observed in the current-voltage (J-V) curve.
| Original language | English |
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| Pages (from-to) | 244-251 |
| Number of pages | 8 |
| Journal | IEEE Journal of Photovoltaics |
| Volume | 6 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2016 |
| Externally published | Yes |