Perimeter recombination characterization by luminescence imaging

Kean Chern Fong, Milan Padilla, Andreas Fell, Evan Franklin, Keith R McIntosh, Teng Choon Kho, Andrew Blakers, Yona Jadwiga Nebel-Jacobsen, Sachin R Surve

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Abstract

Perimeter recombination causes significant efficiency loss in solar cells. This paper presents a method to quantify perimeter recombination via luminescence imaging for silicon solar cells embedded within the wafer. The validity of the method is discussed and verified via 2-D semiconductor simulation. We demonstrate the method to be sufficiently sensitive in that it can quantify perimeter recombination even in a solar cell where no obvious deviation from ideality is observed in the current-voltage (J-V) curve.
Original languageEnglish
Pages (from-to)244-251
Number of pages8
JournalIEEE Journal of Photovoltaics
Volume6
Issue number1
DOIs
Publication statusPublished - Jan 2016
Externally publishedYes

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