Perimeter recombination characterization by luminescence imaging

Kean Chern Fong, Milan Padilla, Andreas Fell, Evan Franklin, Keith R McIntosh, Teng Choon Kho, Andrew Blakers, Yona Jadwiga Nebel-Jacobsen, Sachin R Surve

Research output: Contribution to journalArticleResearchpeer-review

11 Citations (Scopus)

Abstract

Perimeter recombination causes significant efficiency loss in solar cells. This paper presents a method to quantify perimeter recombination via luminescence imaging for silicon solar cells embedded within the wafer. The validity of the method is discussed and verified via 2-D semiconductor simulation. We demonstrate the method to be sufficiently sensitive in that it can quantify perimeter recombination even in a solar cell where no obvious deviation from ideality is observed in the current-voltage (J-V) curve.
Original languageEnglish
Pages (from-to)244-251
Number of pages8
JournalIEEE Journal of Photovoltaics
Volume6
Issue number1
DOIs
Publication statusPublished - Jan 2016
Externally publishedYes

Cite this

Fong, K. C., Padilla, M., Fell, A., Franklin, E., McIntosh, K. R., Kho, T. C., ... Surve, S. R. (2016). Perimeter recombination characterization by luminescence imaging. IEEE Journal of Photovoltaics, 6(1), 244-251. https://doi.org/10.1109/JPHOTOV.2015.2480225
Fong, Kean Chern ; Padilla, Milan ; Fell, Andreas ; Franklin, Evan ; McIntosh, Keith R ; Kho, Teng Choon ; Blakers, Andrew ; Nebel-Jacobsen, Yona Jadwiga ; Surve, Sachin R. / Perimeter recombination characterization by luminescence imaging. In: IEEE Journal of Photovoltaics. 2016 ; Vol. 6, No. 1. pp. 244-251.
@article{1d45605a22a74e1d8dfbb0017604ba7c,
title = "Perimeter recombination characterization by luminescence imaging",
abstract = "Perimeter recombination causes significant efficiency loss in solar cells. This paper presents a method to quantify perimeter recombination via luminescence imaging for silicon solar cells embedded within the wafer. The validity of the method is discussed and verified via 2-D semiconductor simulation. We demonstrate the method to be sufficiently sensitive in that it can quantify perimeter recombination even in a solar cell where no obvious deviation from ideality is observed in the current-voltage (J-V) curve.",
author = "Fong, {Kean Chern} and Milan Padilla and Andreas Fell and Evan Franklin and McIntosh, {Keith R} and Kho, {Teng Choon} and Andrew Blakers and Nebel-Jacobsen, {Yona Jadwiga} and Surve, {Sachin R}",
year = "2016",
month = "1",
doi = "10.1109/JPHOTOV.2015.2480225",
language = "English",
volume = "6",
pages = "244--251",
journal = "IEEE Journal of Photovoltaics",
issn = "2156-3381",
publisher = "IEEE, Institute of Electrical and Electronics Engineers",
number = "1",

}

Fong, KC, Padilla, M, Fell, A, Franklin, E, McIntosh, KR, Kho, TC, Blakers, A, Nebel-Jacobsen, YJ & Surve, SR 2016, 'Perimeter recombination characterization by luminescence imaging', IEEE Journal of Photovoltaics, vol. 6, no. 1, pp. 244-251. https://doi.org/10.1109/JPHOTOV.2015.2480225

Perimeter recombination characterization by luminescence imaging. / Fong, Kean Chern; Padilla, Milan; Fell, Andreas; Franklin, Evan; McIntosh, Keith R; Kho, Teng Choon; Blakers, Andrew; Nebel-Jacobsen, Yona Jadwiga; Surve, Sachin R.

In: IEEE Journal of Photovoltaics, Vol. 6, No. 1, 01.2016, p. 244-251.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Perimeter recombination characterization by luminescence imaging

AU - Fong, Kean Chern

AU - Padilla, Milan

AU - Fell, Andreas

AU - Franklin, Evan

AU - McIntosh, Keith R

AU - Kho, Teng Choon

AU - Blakers, Andrew

AU - Nebel-Jacobsen, Yona Jadwiga

AU - Surve, Sachin R

PY - 2016/1

Y1 - 2016/1

N2 - Perimeter recombination causes significant efficiency loss in solar cells. This paper presents a method to quantify perimeter recombination via luminescence imaging for silicon solar cells embedded within the wafer. The validity of the method is discussed and verified via 2-D semiconductor simulation. We demonstrate the method to be sufficiently sensitive in that it can quantify perimeter recombination even in a solar cell where no obvious deviation from ideality is observed in the current-voltage (J-V) curve.

AB - Perimeter recombination causes significant efficiency loss in solar cells. This paper presents a method to quantify perimeter recombination via luminescence imaging for silicon solar cells embedded within the wafer. The validity of the method is discussed and verified via 2-D semiconductor simulation. We demonstrate the method to be sufficiently sensitive in that it can quantify perimeter recombination even in a solar cell where no obvious deviation from ideality is observed in the current-voltage (J-V) curve.

UR - http://ieeexplore.ieee.org.ezproxy.lib.monash.edu.au/stamp/stamp.jsp?tp=&arnumber=7293584

U2 - 10.1109/JPHOTOV.2015.2480225

DO - 10.1109/JPHOTOV.2015.2480225

M3 - Article

VL - 6

SP - 244

EP - 251

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

SN - 2156-3381

IS - 1

ER -

Fong KC, Padilla M, Fell A, Franklin E, McIntosh KR, Kho TC et al. Perimeter recombination characterization by luminescence imaging. IEEE Journal of Photovoltaics. 2016 Jan;6(1):244-251. https://doi.org/10.1109/JPHOTOV.2015.2480225