Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Patrick M A Sleiman, Mark C. Rosamond, M. Alba Martin, Ahmad Ayesh, Amal Al Ghaferi, A. J. Gallant, Mohammed F. Mabrook, Dagou A. Zeze

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A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ±30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (∼9.15 × 10 11cm -2) and demonstrated 94% charge retention due to the superior encapsulation.

Original languageEnglish
Article number023302
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 9 Jan 2012
Externally publishedYes

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