Abstract
This paper presents performance comparison between two emerging resistive Non-Volatile Memory (NVM) technologies; namely Memristors and Phase Change Memory (PCM); using nanocrossbar architecture. A comparison in terms of leakage current, reading and writing delay, and energy consumption between both non-volatile memory devices, with SRAM based nanocrossbar as benchmark was carried. It was found that Memristive crossbars offer 3 orders of magnitude improvement in the average read cycle, compared to SRAM based crossbars. On the other hand; both PCM based and Memristor based crossbars offered more than 2 orders of magnitude improvement in leakage energy compared to SRAM based crossbars. The aim of this comparison is to provide a fair simulation platform to study and compare PCM crossbar and Memristive crossbar.
Original language | English |
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Title of host publication | IEEE-NANO 2015 - 15th International Conference on Nanotechnology |
Publisher | IEEE, Institute of Electrical and Electronics Engineers |
Pages | 456-459 |
Number of pages | 4 |
ISBN (Electronic) | 9781467381550 |
DOIs | |
Publication status | Published - 2015 |
Externally published | Yes |
Event | IEEE International Conference on Nanotechnology 2015 - Rome, Italy Duration: 27 Jul 2015 → 30 Jul 2015 Conference number: 15TH https://ieeexplore.ieee.org/xpl/conhome/7383413/proceeding (Proceedings) |
Conference
Conference | IEEE International Conference on Nanotechnology 2015 |
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Abbreviated title | IEEE-NANO 2015 |
Country/Territory | Italy |
City | Rome |
Period | 27/07/15 → 30/07/15 |
Internet address |
Keywords
- crossbar architecture
- leakage currents
- memristor
- PCM