PCM and Memristor based nanocrossbars

Patrick W.C. Ho, Nemat H. El-Hassan, T. Nandha Kumar, Haider Abbas F. Almurib

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

1 Citation (Scopus)

Abstract

This paper presents performance comparison between two emerging resistive Non-Volatile Memory (NVM) technologies; namely Memristors and Phase Change Memory (PCM); using nanocrossbar architecture. A comparison in terms of leakage current, reading and writing delay, and energy consumption between both non-volatile memory devices, with SRAM based nanocrossbar as benchmark was carried. It was found that Memristive crossbars offer 3 orders of magnitude improvement in the average read cycle, compared to SRAM based crossbars. On the other hand; both PCM based and Memristor based crossbars offered more than 2 orders of magnitude improvement in leakage energy compared to SRAM based crossbars. The aim of this comparison is to provide a fair simulation platform to study and compare PCM crossbar and Memristive crossbar.

Original languageEnglish
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages456-459
Number of pages4
ISBN (Electronic)9781467381550
DOIs
Publication statusPublished - 2015
Externally publishedYes
EventIEEE International Conference on Nanotechnology 2015 - Rome, Italy
Duration: 27 Jul 201530 Jul 2015
Conference number: 15TH
https://ieeexplore.ieee.org/xpl/conhome/7383413/proceeding (Proceedings)

Conference

ConferenceIEEE International Conference on Nanotechnology 2015
Abbreviated titleIEEE-NANO 2015
Country/TerritoryItaly
CityRome
Period27/07/1530/07/15
Internet address

Keywords

  • crossbar architecture
  • leakage currents
  • memristor
  • PCM

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