Patterned carbon nanotube thin-film transistors with transfer-print assembly

V. K. Sangwan, D. R. Hines, V. W. Ballarotto, G. Esen, M. S. Fuhrer, E. D. Williams

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

4 Citations (Scopus)

Abstract

Conditions for the transfer printing of patterned carbon nanotube (CNT) films, along with a Au-gate, a poly methylmethacrylate (PMMA) dielectric layer and Au source-drain electrodes have been developed for the fabrication of thin-film transistors on a polyethylene terephthalate (PET) substrate. Chemical vapor deposition (CVD) grown CNTs were patterned using a photolithographic method. Transfer printing was used to fabricate devices having both top gate and bottom gate configurations. Replacement of the SiO2 dielectric with PMMA correlates with a decreased hysteresis in the transconductance behavior. Encapsulation of the CNTs between the polymeric substrate and dielectric layer yields ambipolar behavior. Variations in device performance are also observed as a function of CNT film density and channel length, suggesting changing contributions of the metallic and semiconducting CNTs to the transport mechanism.

Original languageEnglish
Title of host publicationNanowires and Carbon Nanotubes
Subtitle of host publicationScience and Applications
Pages94-100
Number of pages7
Publication statusPublished - 1 Dec 2006
Externally publishedYes
Event2006 MRS Fall Meeting - Boston, MA, United States of America
Duration: 27 Nov 20061 Dec 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume963
ISSN (Print)0272-9172

Conference

Conference2006 MRS Fall Meeting
CountryUnited States of America
CityBoston, MA
Period27/11/061/12/06

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