Passivating Graphene and Suppressing Interfacial Phonon Scattering with Mechanically Transferred Large-Area Ga2O3

Matthew Gebert; Semonti Bhattacharyya; Christopher C. Bounds; Nitu Syed; Torben Daeneke; Michael S. Fuhrer

doi:10.1021/acs.nanolett.2c03492

Passivating Graphene and Suppressing Interfacial Phonon Scattering with Mechanically Transferred Large-Area Ga₂O₃

Matthew Gebert, Semonti Bhattacharyya, Christopher C. Bounds, Nitu Syed, Torben Daeneke, Michael S. Fuhrer

School of Physics and Astronomy

Research output: Contribution to journal › Article › Research › peer-review

11 Citations (Scopus)

Abstract

We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga₂O₃synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimeter-scale passivated and bare graphene on SiO₂/Si indicates that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the temperature-dependent resistivity is reduced in passivated graphene over a range of temperatures below 220 K, due to the interplay of screening of the surface optical phonon modes of the SiO₂by high-dielectric-constant Ga₂O₃and the relatively high characteristic phonon frequencies of Ga₂O₃.

Original language	English
Pages (from-to)	363-370
Number of pages	8
Journal	Nano Letters
Volume	23
Issue number	1
DOIs	https://doi.org/10.1021/acs.nanolett.2c03492
Publication status	Published - 11 Jan 2023

Keywords

"chemical vapor deposition (CVD) graphene"
"dielectric screening"
"mm-scale oxide dielectric"
"passivation"
"remote interfacial polar phonon scattering"
"van der Waals heterostructure"

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10.1021/acs.nanolett.2c03492Licence: CC BY

Cite this

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title = "Passivating Graphene and Suppressing Interfacial Phonon Scattering with Mechanically Transferred Large-Area Ga2O3",

abstract = "We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga2O3synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimeter-scale passivated and bare graphene on SiO2/Si indicates that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the temperature-dependent resistivity is reduced in passivated graphene over a range of temperatures below 220 K, due to the interplay of screening of the surface optical phonon modes of the SiO2by high-dielectric-constant Ga2O3and the relatively high characteristic phonon frequencies of Ga2O3.",

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author = "Matthew Gebert and Semonti Bhattacharyya and Bounds, {Christopher C.} and Nitu Syed and Torben Daeneke and Fuhrer, {Michael S.}",

note = "Funding Information: This work was supported by the ARC Centre of Excellence in Future Low-Energy Electronics Technologies (CE170100039). We acknowledge Dr. Kaijian Xing for discussions regarding the dielectric constant of GaO and Dr. Matthias Wurdack for discussions regarding the transfer process of GaO. Dr. Nitu Syed acknowledges the Mackenzie Fellowship for funding and support. This work was performed in part at the Melbourne Centre for Nanofabrication (MCN) in the Victorian Node of the Australian National Fabrication Facility (ANFF) with support from Mark Edmonds{\textquoteright} ANFF-VIC Technology Fellowship. 2 3 2 3 Publisher Copyright: {\textcopyright} 2023 American Chemical Society. All rights reserved.",

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doi = "10.1021/acs.nanolett.2c03492",

language = "English",

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AU - Gebert, Matthew

AU - Bhattacharyya, Semonti

AU - Bounds, Christopher C.

AU - Syed, Nitu

AU - Daeneke, Torben

AU - Fuhrer, Michael S.

N1 - Funding Information: This work was supported by the ARC Centre of Excellence in Future Low-Energy Electronics Technologies (CE170100039). We acknowledge Dr. Kaijian Xing for discussions regarding the dielectric constant of GaO and Dr. Matthias Wurdack for discussions regarding the transfer process of GaO. Dr. Nitu Syed acknowledges the Mackenzie Fellowship for funding and support. This work was performed in part at the Melbourne Centre for Nanofabrication (MCN) in the Victorian Node of the Australian National Fabrication Facility (ANFF) with support from Mark Edmonds’ ANFF-VIC Technology Fellowship. 2 3 2 3 Publisher Copyright: © 2023 American Chemical Society. All rights reserved.

PY - 2023/1/11

Y1 - 2023/1/11

N2 - We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga2O3synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimeter-scale passivated and bare graphene on SiO2/Si indicates that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the temperature-dependent resistivity is reduced in passivated graphene over a range of temperatures below 220 K, due to the interplay of screening of the surface optical phonon modes of the SiO2by high-dielectric-constant Ga2O3and the relatively high characteristic phonon frequencies of Ga2O3.

AB - We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga2O3synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimeter-scale passivated and bare graphene on SiO2/Si indicates that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the temperature-dependent resistivity is reduced in passivated graphene over a range of temperatures below 220 K, due to the interplay of screening of the surface optical phonon modes of the SiO2by high-dielectric-constant Ga2O3and the relatively high characteristic phonon frequencies of Ga2O3.

KW - "chemical vapor deposition (CVD) graphene"

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Passivating Graphene and Suppressing Interfacial Phonon Scattering with Mechanically Transferred Large-Area Ga₂O₃

Abstract

Keywords

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ARC Centre of Excellence in Future Low-energy Electronics Technologies

Cite this

Passivating Graphene and Suppressing Interfacial Phonon Scattering with Mechanically Transferred Large-Area Ga2O3

Abstract

Keywords

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Projects

ARC Centre of Excellence in Future Low-energy Electronics Technologies

Cite this

Passivating Graphene and Suppressing Interfacial Phonon Scattering with Mechanically Transferred Large-Area Ga₂O₃