p-Type doping of Hg0.4Cd0.6Te using Et4Sb2

Patrick William Leech; Kerryn D Heazle; Glen B. Deacon; R. S. Dickson; B. O. West; Marcella E Faith; C R Frost

doi:10.1016/0022-0248(94)90173-2

p-Type doping of Hg_0.4Cd_0.6Te using Et₄Sb₂

Patrick William Leech, Kerryn D Heazle, Glen B. Deacon, R. S. Dickson, B. O. West, Marcella E Faith, C R Frost

School of Chemistry

Research output: Contribution to journal › Article › Research › peer-review

2 Citations (Scopus)

Abstract

The p-type doping of Hg_-xCd_xTe (x = 0.6) by tetraethyldistibine (Et₄Sb₂ during metalorganic chemical vapor deposition is described. The growth experiments were performed using the interdiffused multilayer process at a temperature of 280°C. The 77 K hole concentration was a function of Et₄Sb₂ flow rate, with an upper limit of ≈(1-2)X10¹⁶ cm^-3.

Original language	English
Pages (from-to)	247-250
Number of pages	4
Journal	Journal of Crystal Growth
Volume	139
Issue number	3-4
DOIs	https://doi.org/10.1016/0022-0248(94)90173-2
Publication status	Published - 2 May 1994

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10.1016/0022-0248(94)90173-2

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@article{658a85df4a604af2b3a224b2616eddf0,

title = "p-Type doping of Hg0.4Cd0.6Te using Et4Sb2",

abstract = "The p-type doping of Hg-xCdxTe (x = 0.6) by tetraethyldistibine (Et4Sb2 during metalorganic chemical vapor deposition is described. The growth experiments were performed using the interdiffused multilayer process at a temperature of 280°C. The 77 K hole concentration was a function of Et4Sb2 flow rate, with an upper limit of ≈(1-2)X1016 cm-3.",

author = "Leech, \{Patrick William\} and Heazle, \{Kerryn D\} and Deacon, \{Glen B.\} and Dickson, \{R. S.\} and West, \{B. O.\} and Faith, \{Marcella E\} and Frost, \{C R\}",

year = "1994",

month = may,

day = "2",

doi = "10.1016/0022-0248(94)90173-2",

language = "English",

volume = "139",

pages = "247--250",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier BV",

number = "3-4",

}

TY - JOUR

T1 - p-Type doping of Hg0.4Cd0.6Te using Et4Sb2

AU - Leech, Patrick William

AU - Heazle, Kerryn D

AU - Deacon, Glen B.

AU - Dickson, R. S.

AU - West, B. O.

AU - Faith, Marcella E

AU - Frost, C R

PY - 1994/5/2

Y1 - 1994/5/2

N2 - The p-type doping of Hg-xCdxTe (x = 0.6) by tetraethyldistibine (Et4Sb2 during metalorganic chemical vapor deposition is described. The growth experiments were performed using the interdiffused multilayer process at a temperature of 280°C. The 77 K hole concentration was a function of Et4Sb2 flow rate, with an upper limit of ≈(1-2)X1016 cm-3.

AB - The p-type doping of Hg-xCdxTe (x = 0.6) by tetraethyldistibine (Et4Sb2 during metalorganic chemical vapor deposition is described. The growth experiments were performed using the interdiffused multilayer process at a temperature of 280°C. The 77 K hole concentration was a function of Et4Sb2 flow rate, with an upper limit of ≈(1-2)X1016 cm-3.

UR - http://www.scopus.com/inward/record.url?scp=0028761069&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(94)90173-2

DO - 10.1016/0022-0248(94)90173-2

M3 - Article

AN - SCOPUS:0028761069

SN - 0022-0248

VL - 139

SP - 247

EP - 250

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

p-Type doping of Hg0.4Cd0.6Te using Et4Sb2

Abstract

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p-Type doping of Hg_0.4Cd_0.6Te using Et₄Sb₂