p-Type doping of Hg0.4Cd0.6Te using Et4Sb2

Patrick William Leech, Kerryn D Heazle, Glen B. Deacon, R. S. Dickson, B. O. West, Marcella E Faith, C R Frost

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The p-type doping of Hg-xCdxTe (x = 0.6) by tetraethyldistibine (Et4Sb2 during metalorganic chemical vapor deposition is described. The growth experiments were performed using the interdiffused multilayer process at a temperature of 280°C. The 77 K hole concentration was a function of Et4Sb2 flow rate, with an upper limit of ≈(1-2)X1016 cm-3.

Original languageEnglish
Pages (from-to)247-250
Number of pages4
JournalJournal of Crystal Growth
Issue number3-4
Publication statusPublished - 2 May 1994

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