P-Type a-Si: H/ZnO:Al and μc-Si:H/ZnO:Al thin-film solar cell structures - A comparative hard X-ray photoelectron spectroscopy study

Daniel Gerlach, D. Wippler, R. G. Wilks, Maximilian Hannes Wimmer, M. Lozac'H, Roberto Félix, S. Ueda, H. Yoshikawa, K. Lips, B. Rech, M. Sumiya, Kazuyoshi Ken Kobayashi, M. Gorgoi, J. Hüpkes, Marcus Bär

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review


The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.

Original languageEnglish
Title of host publication2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012
PublisherIEEE, Institute of Electrical and Electronics Engineers
EditionPART 2
ISBN (Print)9781467328883
Publication statusPublished - 2012
Externally publishedYes
EventIEEE Photovoltaic Specialists Conference 2012 - Austin, United States of America
Duration: 3 Jun 20128 Jun 2012
Conference number: 38th
https://ieeexplore.ieee.org/xpl/conhome/6304846/proceeding (Proceedings)


ConferenceIEEE Photovoltaic Specialists Conference 2012
Abbreviated titlePVSC 2012
Country/TerritoryUnited States of America
Internet address


  • Hard X-ray photoelectron spectroscopy (HAXPES)
  • Si thin-film solar cell
  • surface and interface analysis

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