Abstract
The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.
Original language | English |
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Title of host publication | 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012 |
Publisher | IEEE, Institute of Electrical and Electronics Engineers |
Edition | PART 2 |
ISBN (Print) | 9781467328883 |
Publication status | Published - 2012 |
Externally published | Yes |
Event | IEEE Photovoltaic Specialists Conference 2012 - Austin, United States of America Duration: 3 Jun 2012 → 8 Jun 2012 Conference number: 38th https://ieeexplore.ieee.org/xpl/conhome/6304846/proceeding (Proceedings) |
Conference
Conference | IEEE Photovoltaic Specialists Conference 2012 |
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Abbreviated title | PVSC 2012 |
Country/Territory | United States of America |
City | Austin |
Period | 3/06/12 → 8/06/12 |
Internet address |
Keywords
- Hard X-ray photoelectron spectroscopy (HAXPES)
- Si thin-film solar cell
- surface and interface analysis