P-Type a-Si: H/ZnO:Al and μc-Si:H/ZnO:Al thin-film solar cell structures - A comparative hard X-ray photoelectron spectroscopy study

Daniel Gerlach; D. Wippler; R. G. Wilks; Maximilian Hannes Wimmer; M. Lozac'H; Roberto Félix; S. Ueda; H. Yoshikawa; K. Lips; B. Rech; M. Sumiya; Kazuyoshi Ken Kobayashi; M. Gorgoi; J. Hüpkes; Marcus Bär

P-Type a-Si: H/ZnO:Al and μc-Si:H/ZnO:Al thin-film solar cell structures - A comparative hard X-ray photoelectron spectroscopy study

Daniel Gerlach, D. Wippler, R. G. Wilks, Maximilian Hannes Wimmer, M. Lozac'H, Roberto Félix, S. Ueda, H. Yoshikawa, K. Lips, B. Rech, M. Sumiya, Kazuyoshi Ken Kobayashi, M. Gorgoi, J. Hüpkes, Marcus Bär

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

Abstract

The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.

Original language	English
Title of host publication	2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Edition	PART 2
ISBN (Print)	9781467328883
Publication status	Published - 2012
Externally published	Yes
Event	IEEE Photovoltaic Specialists Conference 2012 - Austin, United States of America Duration: 3 Jun 2012 → 8 Jun 2012 Conference number: 38th https://ieeexplore.ieee.org/xpl/conhome/6304846/proceeding (Proceedings)

Conference

Conference	IEEE Photovoltaic Specialists Conference 2012
Abbreviated title	PVSC 2012
Country/Territory	United States of America
City	Austin
Period	3/06/12 → 8/06/12
Internet address	https://ieeexplore.ieee.org/xpl/conhome/6304846/proceeding (Proceedings)

Keywords

Hard X-ray photoelectron spectroscopy (HAXPES)
Si thin-film solar cell
surface and interface analysis

Cite this

Gerlach, D., Wippler, D., Wilks, R. G., Wimmer, M. H., Lozac'H, M., Félix, R., Ueda, S., Yoshikawa, H., Lips, K., Rech, B., Sumiya, M., Kobayashi, K. K., Gorgoi, M., Hüpkes, J., & Bär, M. (2012). P-Type a-Si: H/ZnO:Al and μc-Si:H/ZnO:Al thin-film solar cell structures - A comparative hard X-ray photoelectron spectroscopy study. In 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012 (PART 2 ed.). [2224644] IEEE, Institute of Electrical and Electronics Engineers.

@inproceedings{047ee138e7144de099eca6d630283591,

title = "P-Type a-Si: H/ZnO:Al and μc-Si:H/ZnO:Al thin-film solar cell structures - A comparative hard X-ray photoelectron spectroscopy study",

abstract = "The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.",

keywords = "Hard X-ray photoelectron spectroscopy (HAXPES), Si thin-film solar cell, surface and interface analysis",

author = "Daniel Gerlach and D. Wippler and Wilks, {R. G.} and Wimmer, {Maximilian Hannes} and M. Lozac'H and Roberto F{\'e}lix and S. Ueda and H. Yoshikawa and K. Lips and B. Rech and M. Sumiya and Kobayashi, {Kazuyoshi Ken} and M. Gorgoi and J. H{\"u}pkes and Marcus B{\"a}r",

year = "2012",

language = "English",

isbn = "9781467328883",

booktitle = "2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States of America",

edition = "PART 2",

note = "IEEE Photovoltaic Specialists Conference 2012, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

url = "https://ieeexplore.ieee.org/xpl/conhome/6304846/proceeding",

}

Gerlach, D, Wippler, D, Wilks, RG, Wimmer, MH, Lozac'H, M, Félix, R, Ueda, S, Yoshikawa, H, Lips, K, Rech, B, Sumiya, M, Kobayashi, KK, Gorgoi, M, Hüpkes, J & Bär, M 2012, P-Type a-Si: H/ZnO:Al and μc-Si:H/ZnO:Al thin-film solar cell structures - A comparative hard X-ray photoelectron spectroscopy study. in 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012. PART 2 edn, 2224644, IEEE, Institute of Electrical and Electronics Engineers, IEEE Photovoltaic Specialists Conference 2012, Austin, Texas, United States of America, 3/06/12.

P-Type a-Si : H/ZnO:Al and μc-Si:H/ZnO:Al thin-film solar cell structures - A comparative hard X-ray photoelectron spectroscopy study. / Gerlach, Daniel; Wippler, D.; Wilks, R. G. et al.

2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012. PART 2. ed. IEEE, Institute of Electrical and Electronics Engineers, 2012. 2224644.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

TY - GEN

T1 - P-Type a-Si

T2 - IEEE Photovoltaic Specialists Conference 2012

AU - Gerlach, Daniel

AU - Wippler, D.

AU - Wilks, R. G.

AU - Wimmer, Maximilian Hannes

AU - Lozac'H, M.

AU - Félix, Roberto

AU - Ueda, S.

AU - Yoshikawa, H.

AU - Lips, K.

AU - Rech, B.

AU - Sumiya, M.

AU - Kobayashi, Kazuyoshi Ken

AU - Gorgoi, M.

AU - Hüpkes, J.

AU - Bär, Marcus

N1 - Conference code: 38th

PY - 2012

Y1 - 2012

N2 - The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.

AB - The chemical and electronic properties of a-Si:H(B)/ZnO:Al and μc-Si:H(B)/ZnO:Al thin-film solar cell structures are studied by hard X-ray photoelectron spectroscopy (HAXPES). Using a combination of different X-ray excitation energies and deliberate sample design, we were able to select the probed volume, i.e., the silicon capping layer only or the silicon and zinc oxide layer (including the buried interface). For the a-Si:H(B) material, we find a higher deposition rate and a smaller value for the modified Auger parameter than for μc-Si:H(B). In addition, we find indications of a pronounced band bending limited to the very surface of the a-Si:H(B) and the μc-Si:H(B) layers, which is more distinct in the latter case.

KW - Hard X-ray photoelectron spectroscopy (HAXPES)

KW - Si thin-film solar cell

KW - surface and interface analysis

UR - http://www.scopus.com/inward/record.url?scp=84891340981&partnerID=8YFLogxK

M3 - Conference Paper

AN - SCOPUS:84891340981

SN - 9781467328883

BT - 2012 IEEE 38th Photovoltaic Specialists Conference, PVSC 2012

PB - IEEE, Institute of Electrical and Electronics Engineers

Y2 - 3 June 2012 through 8 June 2012

ER -

P-Type a-Si: H/ZnO:Al and μc-Si:H/ZnO:Al thin-film solar cell structures - A comparative hard X-ray photoelectron spectroscopy study

Abstract

Conference

Keywords

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Cite this