Overcoming the electroluminescence efficiency limitations in quantum-dot light-emitting diodes

Qasim Khan, Alagesan Subramanian, Imtiaz Ahmed, Maaz Khan, Arokia Nathan, Guoping Wang, Lei Wei, Jing Chen, Yupeng Zhang, Qiaoliang Bao

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Development of quantum dots (QDs) based light-emitting diodes (QLEDs) is driven by attractive properties of these fluorophores such as precise Gaussian distribution, tunable emission, and facile solution processability. The performance of QLED devices is limited by intrinsic factors such as luminance quenching in quantum dots due to imbalanced carrier injection predominantly caused by a large hole injection barrier as well as by extrinsic processes such as nonradiative recombination at active layer interfaces. The Auger recombination problem is overcome by charge siphoning at the interfaces between QDs and charge-transporting material. A simplest trilayer (p–i–n) LED structure is fabricated using an all-solution processing method: a carefully engineered p-type polymeric hole transport layer with a gradient work function is incorporated. The gradient work function creates the cascading energy levels from the moderate Fermi level anode to the deep-lying valence band level of QDs. As a result, the QLEDs exhibit significantly improved external quantum efficiencies and luminous efficiencies of 15.9% and 31.8 cd A−1, 17.4% and 59.3 cd A−1, and 12.8% and 14.4 cd A−1 for red, green, and blue light-emitting devices, respectively. It is expected that the concept demonstrated here will facilitate the design and development of efficient solution-processible QLEDs for full-color displays.

Original languageEnglish
Article number1900695
Number of pages9
JournalAdvanced Optical Materials
DOIs
Publication statusAccepted/In press - 22 Jul 2019

Keywords

  • Förster resonance energy transfer
  • gradient hole transport layer
  • light-emitting diodes
  • quantum-dots

Cite this

Khan, Qasim ; Subramanian, Alagesan ; Ahmed, Imtiaz ; Khan, Maaz ; Nathan, Arokia ; Wang, Guoping ; Wei, Lei ; Chen, Jing ; Zhang, Yupeng ; Bao, Qiaoliang. / Overcoming the electroluminescence efficiency limitations in quantum-dot light-emitting diodes. In: Advanced Optical Materials. 2019.
@article{befc73a64aa14bbf876ba463a2baf550,
title = "Overcoming the electroluminescence efficiency limitations in quantum-dot light-emitting diodes",
abstract = "Development of quantum dots (QDs) based light-emitting diodes (QLEDs) is driven by attractive properties of these fluorophores such as precise Gaussian distribution, tunable emission, and facile solution processability. The performance of QLED devices is limited by intrinsic factors such as luminance quenching in quantum dots due to imbalanced carrier injection predominantly caused by a large hole injection barrier as well as by extrinsic processes such as nonradiative recombination at active layer interfaces. The Auger recombination problem is overcome by charge siphoning at the interfaces between QDs and charge-transporting material. A simplest trilayer (p–i–n) LED structure is fabricated using an all-solution processing method: a carefully engineered p-type polymeric hole transport layer with a gradient work function is incorporated. The gradient work function creates the cascading energy levels from the moderate Fermi level anode to the deep-lying valence band level of QDs. As a result, the QLEDs exhibit significantly improved external quantum efficiencies and luminous efficiencies of 15.9{\%} and 31.8 cd A−1, 17.4{\%} and 59.3 cd A−1, and 12.8{\%} and 14.4 cd A−1 for red, green, and blue light-emitting devices, respectively. It is expected that the concept demonstrated here will facilitate the design and development of efficient solution-processible QLEDs for full-color displays.",
keywords = "F{\"o}rster resonance energy transfer, gradient hole transport layer, light-emitting diodes, quantum-dots",
author = "Qasim Khan and Alagesan Subramanian and Imtiaz Ahmed and Maaz Khan and Arokia Nathan and Guoping Wang and Lei Wei and Jing Chen and Yupeng Zhang and Qiaoliang Bao",
year = "2019",
month = "7",
day = "22",
doi = "10.1002/adom.201900695",
language = "English",
journal = "Advanced Optical Materials",
issn = "2195-1071",
publisher = "Wiley-Blackwell",

}

Overcoming the electroluminescence efficiency limitations in quantum-dot light-emitting diodes. / Khan, Qasim; Subramanian, Alagesan; Ahmed, Imtiaz; Khan, Maaz; Nathan, Arokia; Wang, Guoping; Wei, Lei; Chen, Jing; Zhang, Yupeng; Bao, Qiaoliang.

In: Advanced Optical Materials, 22.07.2019.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Overcoming the electroluminescence efficiency limitations in quantum-dot light-emitting diodes

AU - Khan, Qasim

AU - Subramanian, Alagesan

AU - Ahmed, Imtiaz

AU - Khan, Maaz

AU - Nathan, Arokia

AU - Wang, Guoping

AU - Wei, Lei

AU - Chen, Jing

AU - Zhang, Yupeng

AU - Bao, Qiaoliang

PY - 2019/7/22

Y1 - 2019/7/22

N2 - Development of quantum dots (QDs) based light-emitting diodes (QLEDs) is driven by attractive properties of these fluorophores such as precise Gaussian distribution, tunable emission, and facile solution processability. The performance of QLED devices is limited by intrinsic factors such as luminance quenching in quantum dots due to imbalanced carrier injection predominantly caused by a large hole injection barrier as well as by extrinsic processes such as nonradiative recombination at active layer interfaces. The Auger recombination problem is overcome by charge siphoning at the interfaces between QDs and charge-transporting material. A simplest trilayer (p–i–n) LED structure is fabricated using an all-solution processing method: a carefully engineered p-type polymeric hole transport layer with a gradient work function is incorporated. The gradient work function creates the cascading energy levels from the moderate Fermi level anode to the deep-lying valence band level of QDs. As a result, the QLEDs exhibit significantly improved external quantum efficiencies and luminous efficiencies of 15.9% and 31.8 cd A−1, 17.4% and 59.3 cd A−1, and 12.8% and 14.4 cd A−1 for red, green, and blue light-emitting devices, respectively. It is expected that the concept demonstrated here will facilitate the design and development of efficient solution-processible QLEDs for full-color displays.

AB - Development of quantum dots (QDs) based light-emitting diodes (QLEDs) is driven by attractive properties of these fluorophores such as precise Gaussian distribution, tunable emission, and facile solution processability. The performance of QLED devices is limited by intrinsic factors such as luminance quenching in quantum dots due to imbalanced carrier injection predominantly caused by a large hole injection barrier as well as by extrinsic processes such as nonradiative recombination at active layer interfaces. The Auger recombination problem is overcome by charge siphoning at the interfaces between QDs and charge-transporting material. A simplest trilayer (p–i–n) LED structure is fabricated using an all-solution processing method: a carefully engineered p-type polymeric hole transport layer with a gradient work function is incorporated. The gradient work function creates the cascading energy levels from the moderate Fermi level anode to the deep-lying valence band level of QDs. As a result, the QLEDs exhibit significantly improved external quantum efficiencies and luminous efficiencies of 15.9% and 31.8 cd A−1, 17.4% and 59.3 cd A−1, and 12.8% and 14.4 cd A−1 for red, green, and blue light-emitting devices, respectively. It is expected that the concept demonstrated here will facilitate the design and development of efficient solution-processible QLEDs for full-color displays.

KW - Förster resonance energy transfer

KW - gradient hole transport layer

KW - light-emitting diodes

KW - quantum-dots

UR - http://www.scopus.com/inward/record.url?scp=85069905951&partnerID=8YFLogxK

U2 - 10.1002/adom.201900695

DO - 10.1002/adom.201900695

M3 - Article

JO - Advanced Optical Materials

JF - Advanced Optical Materials

SN - 2195-1071

M1 - 1900695

ER -