Origin of A- or B-type NiSii2 determined by in in situ transmission electron microscopy and diffraction during growth

J. M. Gibson, J. L. Batstone, R. T. Tung, F. C. Unterwald

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In situ transmission electron microscopy during the growth of NiSi2 on Si by molecular beam epitaxy shows that the metastable phase, -Ni2Si grows at 300°C upon the reaction of certain deposited Ni films on (111) but never on (100) Si. Its existence correlates with the subsequent growth of type-A NiSi2 at 450°C. The low energy of epitaxial interfaces can influence phase formation in very thin films, leading to unusual thickness-dependent behavior such as the type-B type-A NiSi2 enigma.

Original languageEnglish
Pages (from-to)1158-1161
Number of pages4
JournalPhysical Review Letters
Issue number12
Publication statusPublished - 1988
Externally publishedYes

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