TY - JOUR
T1 - Ordered porous metal oxide semiconductors for gas sensing
AU - Zhou, Xinran
AU - Cheng, Xiaowei
AU - Zhu, Yongheng
AU - Elzatahry, Ahmed A.
AU - Alghamdi, Abdulaziz
AU - Deng, Yonghui
AU - Zhao, Dongyuan
PY - 2018/3
Y1 - 2018/3
N2 - Among various gas sensing materials, metal oxide semiconductors have shown great potential as resistive type sensors. The ordered porous structural metal oxide semiconductors with well-defined meso- or macro-pores chemically synthesized via soft-templating method and nanocasting strategy have high porosity, highly interconnected pore channels and high surface area with enormous active sites for interacting with gaseous molecules. These features enable them good performance in gas sensing, including high sensitivity, fast response and recovery, good selectivity. This review gives a comprehensive summary about the porous metal oxides with focus on the synthesis methods, structure related properties, as well as the modification strategies for gas sensing improved performances.
AB - Among various gas sensing materials, metal oxide semiconductors have shown great potential as resistive type sensors. The ordered porous structural metal oxide semiconductors with well-defined meso- or macro-pores chemically synthesized via soft-templating method and nanocasting strategy have high porosity, highly interconnected pore channels and high surface area with enormous active sites for interacting with gaseous molecules. These features enable them good performance in gas sensing, including high sensitivity, fast response and recovery, good selectivity. This review gives a comprehensive summary about the porous metal oxides with focus on the synthesis methods, structure related properties, as well as the modification strategies for gas sensing improved performances.
KW - Gas sensing
KW - Metal oxides
KW - Porous materials
KW - Templating-synthesis
UR - http://www.scopus.com/inward/record.url?scp=85028363085&partnerID=8YFLogxK
U2 - 10.1016/j.cclet.2017.06.021
DO - 10.1016/j.cclet.2017.06.021
M3 - Article
AN - SCOPUS:85028363085
VL - 29
SP - 405
EP - 416
JO - Chinese Chemical Letters
JF - Chinese Chemical Letters
SN - 1001-8417
IS - 3
ER -