Ordered porous metal oxide semiconductors for gas sensing

Xinran Zhou, Xiaowei Cheng, Yongheng Zhu, Ahmed A. Elzatahry, Abdulaziz Alghamdi, Yonghui Deng, Dongyuan Zhao

Research output: Contribution to journalArticleResearchpeer-review

34 Citations (Scopus)

Abstract

Among various gas sensing materials, metal oxide semiconductors have shown great potential as resistive type sensors. The ordered porous structural metal oxide semiconductors with well-defined meso- or macro-pores chemically synthesized via soft-templating method and nanocasting strategy have high porosity, highly interconnected pore channels and high surface area with enormous active sites for interacting with gaseous molecules. These features enable them good performance in gas sensing, including high sensitivity, fast response and recovery, good selectivity. This review gives a comprehensive summary about the porous metal oxides with focus on the synthesis methods, structure related properties, as well as the modification strategies for gas sensing improved performances.

Original languageEnglish
Pages (from-to)405-416
Number of pages12
JournalChinese Chemical Letters
Volume29
Issue number3
DOIs
Publication statusPublished - Mar 2018
Externally publishedYes

Keywords

  • Gas sensing
  • Metal oxides
  • Porous materials
  • Templating-synthesis

Cite this

Zhou, X., Cheng, X., Zhu, Y., Elzatahry, A. A., Alghamdi, A., Deng, Y., & Zhao, D. (2018). Ordered porous metal oxide semiconductors for gas sensing. Chinese Chemical Letters, 29(3), 405-416. https://doi.org/10.1016/j.cclet.2017.06.021
Zhou, Xinran ; Cheng, Xiaowei ; Zhu, Yongheng ; Elzatahry, Ahmed A. ; Alghamdi, Abdulaziz ; Deng, Yonghui ; Zhao, Dongyuan. / Ordered porous metal oxide semiconductors for gas sensing. In: Chinese Chemical Letters. 2018 ; Vol. 29, No. 3. pp. 405-416.
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Zhou, X, Cheng, X, Zhu, Y, Elzatahry, AA, Alghamdi, A, Deng, Y & Zhao, D 2018, 'Ordered porous metal oxide semiconductors for gas sensing', Chinese Chemical Letters, vol. 29, no. 3, pp. 405-416. https://doi.org/10.1016/j.cclet.2017.06.021

Ordered porous metal oxide semiconductors for gas sensing. / Zhou, Xinran; Cheng, Xiaowei; Zhu, Yongheng; Elzatahry, Ahmed A.; Alghamdi, Abdulaziz; Deng, Yonghui; Zhao, Dongyuan.

In: Chinese Chemical Letters, Vol. 29, No. 3, 03.2018, p. 405-416.

Research output: Contribution to journalArticleResearchpeer-review

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AU - Cheng, Xiaowei

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AU - Elzatahry, Ahmed A.

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AU - Deng, Yonghui

AU - Zhao, Dongyuan

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AB - Among various gas sensing materials, metal oxide semiconductors have shown great potential as resistive type sensors. The ordered porous structural metal oxide semiconductors with well-defined meso- or macro-pores chemically synthesized via soft-templating method and nanocasting strategy have high porosity, highly interconnected pore channels and high surface area with enormous active sites for interacting with gaseous molecules. These features enable them good performance in gas sensing, including high sensitivity, fast response and recovery, good selectivity. This review gives a comprehensive summary about the porous metal oxides with focus on the synthesis methods, structure related properties, as well as the modification strategies for gas sensing improved performances.

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Zhou X, Cheng X, Zhu Y, Elzatahry AA, Alghamdi A, Deng Y et al. Ordered porous metal oxide semiconductors for gas sensing. Chinese Chemical Letters. 2018 Mar;29(3):405-416. https://doi.org/10.1016/j.cclet.2017.06.021