Abstract
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.
Original language | English |
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Title of host publication | 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings |
Pages | 139-140 |
Number of pages | 2 |
DOIs | |
Publication status | Published - 1 Dec 2012 |
Externally published | Yes |
Event | Conference on Optoelectronic and Microelectronic Materials and Devices 2012 - The University of Melbourne, Melbourne, Australia Duration: 12 Dec 2012 → 14 Dec 2012 https://ieeexplore.ieee.org/xpl/conhome/6469377/proceeding (Proceedings) |
Publication series
Name | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD |
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Conference
Conference | Conference on Optoelectronic and Microelectronic Materials and Devices 2012 |
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Abbreviated title | COMMAD 2012 |
Country/Territory | Australia |
City | Melbourne |
Period | 12/12/12 → 14/12/12 |
Internet address |