Optoelectronic properties of GaAs nanowire photodetector

H. Wang; P. Parkinson; J. Tian; D. Saxena; S. Mokkapati; Q. Gao; P. Prasai; L. Fu; F. Karouta; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472399

Optoelectronic properties of GaAs nanowire photodetector

H. Wang, P. Parkinson, J. Tian, D. Saxena, S. Mokkapati, Q. Gao, P. Prasai, L. Fu, F. Karouta, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

1 Citation (Scopus)

Abstract

A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	139-140
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472399
Publication status	Published - 1 Dec 2012
Externally published	Yes
Event	Conference on Optoelectronic and Microelectronic Materials and Devices 2012 - The University of Melbourne, Melbourne, Australia Duration: 12 Dec 2012 → 14 Dec 2012 https://ieeexplore.ieee.org/xpl/conhome/6469377/proceeding (Proceedings)

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices 2012
Abbreviated title	COMMAD 2012
Country/Territory	Australia
City	Melbourne
Period	12/12/12 → 14/12/12
Internet address	https://ieeexplore.ieee.org/xpl/conhome/6469377/proceeding (Proceedings)

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10.1109/COMMAD.2012.6472399

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Wang, H., Parkinson, P., Tian, J., Saxena, D., Mokkapati, S., Gao, Q., Prasai, P., Fu, L., Karouta, F., Tan, H. H., & Jagadish, C. (2012). Optoelectronic properties of GaAs nanowire photodetector. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 139-140). [6472399] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472399

Wang, H. ; Parkinson, P. ; Tian, J. ; Saxena, D. ; Mokkapati, S. ; Gao, Q. ; Prasai, P. ; Fu, L. ; Karouta, F. ; Tan, H. H. ; Jagadish, C. / Optoelectronic properties of GaAs nanowire photodetector. 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. pp. 139-140 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

@inproceedings{7f31b925cc154c80b25187864dc7639f,

title = "Optoelectronic properties of GaAs nanowire photodetector",

abstract = "A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.",

author = "H. Wang and P. Parkinson and J. Tian and D. Saxena and S. Mokkapati and Q. Gao and P. Prasai and L. Fu and F. Karouta and Tan, {H. H.} and C. Jagadish",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/COMMAD.2012.6472399",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "139--140",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "Conference on Optoelectronic and Microelectronic Materials and Devices 2012, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

url = "https://ieeexplore.ieee.org/xpl/conhome/6469377/proceeding",

}

Wang, H, Parkinson, P, Tian, J, Saxena, D, Mokkapati, S, Gao, Q, Prasai, P, Fu, L, Karouta, F, Tan, HH & Jagadish, C 2012, Optoelectronic properties of GaAs nanowire photodetector. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472399, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 139-140, Conference on Optoelectronic and Microelectronic Materials and Devices 2012, Melbourne, Victoria, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472399

Optoelectronic properties of GaAs nanowire photodetector. / Wang, H.; Parkinson, P.; Tian, J.; Saxena, D.; Mokkapati, S.; Gao, Q.; Prasai, P.; Fu, L.; Karouta, F.; Tan, H. H.; Jagadish, C.

2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 139-140 6472399 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

TY - GEN

T1 - Optoelectronic properties of GaAs nanowire photodetector

AU - Wang, H.

AU - Parkinson, P.

AU - Tian, J.

AU - Saxena, D.

AU - Mokkapati, S.

AU - Gao, Q.

AU - Prasai, P.

AU - Fu, L.

AU - Karouta, F.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.

AB - A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.

UR - http://www.scopus.com/inward/record.url?scp=84875633308&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2012.6472399

DO - 10.1109/COMMAD.2012.6472399

M3 - Conference Paper

AN - SCOPUS:84875633308

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 139

EP - 140

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Wang H, Parkinson P, Tian J, Saxena D, Mokkapati S, Gao Q et al. Optoelectronic properties of GaAs nanowire photodetector. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 139-140. 6472399. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472399

Optoelectronic properties of GaAs nanowire photodetector

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