Optoelectronic properties of GaAs nanowire photodetector

H. Wang, P. Parkinson, J. Tian, D. Saxena, S. Mokkapati, Q. Gao, P. Prasai, L. Fu, F. Karouta, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceedingConference PaperOther

1 Citation (Scopus)

Abstract

A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.

Original languageEnglish
Title of host publication2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages139-140
Number of pages2
DOIs
Publication statusPublished - 1 Dec 2012
Externally publishedYes
EventConference on Optoelectronic and Microelectronic Materials and Devices 2012 - The University of Melbourne, Melbourne, Australia
Duration: 12 Dec 201214 Dec 2012
https://ieeexplore.ieee.org/xpl/conhome/6469377/proceeding (Proceedings)

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

ConferenceConference on Optoelectronic and Microelectronic Materials and Devices 2012
Abbreviated titleCOMMAD 2012
CountryAustralia
CityMelbourne
Period12/12/1214/12/12
Internet address

Cite this