Optoelectronic investigation of monolayer MoS2/WSe2 vertical heterojunction photoconversion devices

Guoyang Cao, Aixue Shang, Cheng Zhang, Youpin Gong, Shaojuan Li, Qiaoliang Bao, Xiaofeng Li

Research output: Contribution to journalArticleResearchpeer-review

24 Citations (Scopus)

Abstract

Atomically thin transition metal dichalcogenides (TMDs) have gained much attention due to their unique optoelectronic properties. However, besides the plenty of experimental attempts, the optoelectronic simulation, which is useful for uncovering the underlying optical, physical and material mechanisms and promoting the high-performance device designs, has seldom been reported. In this study, addressing the unique device and optoelectronic response of the atomically thin TMD devices and taking the atomically thin MoS2/WSe2 vertical heterojunction as an example, we present a comprehensive optoelectronic simulation which considers the light-trapping as well as the internal carrier generation/transport/collection processes. The optoelectronic simulation provides a convenient way to study the multi-domain responses of the extremely thin optoelectronic devices. Based on the simulation technique, the energy diagrams, the depletion region, the internal electric field distribution, carrier distribution, etc., have been investigated; moreover, we proposed a metallic-cavity-coupled design for the atomically thin MoS2/WSe2 devices which exhibits significantly improved optical absorption, higher photocurrent and increased photoconversion efficiency.

Original languageEnglish
Pages (from-to)260-266
Number of pages7
JournalNano Energy
Volume30
DOIs
Publication statusPublished - 1 Dec 2016
Externally publishedYes

Keywords

  • Interlayer recombination
  • Optoelectronic simulation
  • Photoconversion efficiency
  • Vertical van der Waals heterojunction

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