Perovskite/silicon hybrid tandem solar cells are very close to commercialization owing to their low cost and relatively high efficiency compared to tandem cells based on III-V compound semiconductors. However, most hybrid tandem cell research is based on n-type heterojunction Si cells, which occupy only a small fraction of the total solar market. Here, we propose a new method for optimizing the design of low-cost and high-efficiency monolithic tandem cells based on p-type homojunction Si cells by realizing lossless current matching by simultaneously controlling the band gap energy and thickness of the perovskite film. In addition, systematic studies have been conducted to determine the optimal hole transport layer applicable to the tandem cell from the viewpoint of band alignment and process compatibility, in order to reduce the open-circuit voltage loss. Optimized tandem cells, which were fabricated with a 310 nm thick perovskite layer of (FAPbI3)0.8(MAPbBr3)0.2 and a hole transport layer of poly(triaryl amine), had a significantly increased efficiency of 21.19% compared to semi-transparent stand-alone perovskite (13.4%) and Si cells (12.8%). Our tandem cell represented the highest efficiency increment among all monolithic perovskite/Si tandem cells as well as the highest efficiency among monolithic perovskite/Si tandem cells based on p-type homojunction Si cells with Al back-surface fields. The design rules suggested in this study could also be applicable to different types of perovskite/Si tandem cells.
- P-type crystal silicon
- Perovskite solar cells (PeSCs)
- Tandem devices