Optically tuned terahertz modulator based on annealed multilayer MoS2

Yapeng Cao, Sheng Gan, Zhaoxin Geng, Jian Liu, Yuping Yang, Qiaoling Bao, Hongda Chen

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49 Citations (Scopus)

Abstract

Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS 2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS 2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS 2 -based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS 2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch.

Original languageEnglish
Article number22899
Number of pages9
JournalScientific Reports
Volume6
DOIs
Publication statusPublished - 8 Mar 2016
Externally publishedYes

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