Optical Study of p-doping in GaAs nanowires for low-threshold and high-yield lasing

Juan Arturo Alanis, Mykhaylo Lysevych, Tim Burgess, Dhruv Saxena, Sudha Mokkapati, Stefan Skalsky, Xiaoyan Tang, Peter Mitchell, Alex S. Walton, Hark Hoe Tan, Chennupati Jagadish, Patrick Parkinson

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Semiconductor nanowires suffer from significant non-radiative surface recombination; however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and, hence, quantum efficiency of emission, allowing the demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate (knr) to be (0.14 ± 0.04) ps-1 by modeling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ≥ 3 × 1018 cm-3 and lengths of ≥4 μm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ∼10 μJ cm-2 , and using a data-led filtering step, we present a method to simply identify subsets of nanowires with over 90% lasing yield.

Original languageEnglish
Pages (from-to)362-368
Number of pages7
JournalNano Letters
Issue number1
Publication statusPublished - 9 Jan 2019
Externally publishedYes


  • doping
  • III?V nanowire lasers
  • PL

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