Optical Study of p-doping in GaAs nanowires for low-threshold and high-yield lasing

Juan Arturo Alanis, Mykhaylo Lysevych, Tim Burgess, Dhruv Saxena, Sudha Mokkapati, Stefan Skalsky, Xiaoyan Tang, Peter Mitchell, Alex S. Walton, Hark Hoe Tan, Chennupati Jagadish, Patrick Parkinson

Research output: Contribution to journalArticleResearchpeer-review

4 Citations (Scopus)

Abstract

Semiconductor nanowires suffer from significant non-radiative surface recombination; however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and, hence, quantum efficiency of emission, allowing the demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate (knr) to be (0.14 ± 0.04) ps-1 by modeling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ≥ 3 × 1018 cm-3 and lengths of ≥4 μm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ∼10 μJ cm-2 , and using a data-led filtering step, we present a method to simply identify subsets of nanowires with over 90% lasing yield.

Original languageEnglish
Pages (from-to)362-368
Number of pages7
JournalNano Letters
Volume19
Issue number1
DOIs
Publication statusPublished - 9 Jan 2019
Externally publishedYes

Keywords

  • doping
  • III?V nanowire lasers
  • PL

Cite this

Alanis, J. A., Lysevych, M., Burgess, T., Saxena, D., Mokkapati, S., Skalsky, S., ... Parkinson, P. (2019). Optical Study of p-doping in GaAs nanowires for low-threshold and high-yield lasing. Nano Letters, 19(1), 362-368. https://doi.org/10.1021/acs.nanolett.8b04048
Alanis, Juan Arturo ; Lysevych, Mykhaylo ; Burgess, Tim ; Saxena, Dhruv ; Mokkapati, Sudha ; Skalsky, Stefan ; Tang, Xiaoyan ; Mitchell, Peter ; Walton, Alex S. ; Tan, Hark Hoe ; Jagadish, Chennupati ; Parkinson, Patrick. / Optical Study of p-doping in GaAs nanowires for low-threshold and high-yield lasing. In: Nano Letters. 2019 ; Vol. 19, No. 1. pp. 362-368.
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Alanis, JA, Lysevych, M, Burgess, T, Saxena, D, Mokkapati, S, Skalsky, S, Tang, X, Mitchell, P, Walton, AS, Tan, HH, Jagadish, C & Parkinson, P 2019, 'Optical Study of p-doping in GaAs nanowires for low-threshold and high-yield lasing', Nano Letters, vol. 19, no. 1, pp. 362-368. https://doi.org/10.1021/acs.nanolett.8b04048

Optical Study of p-doping in GaAs nanowires for low-threshold and high-yield lasing. / Alanis, Juan Arturo; Lysevych, Mykhaylo; Burgess, Tim; Saxena, Dhruv; Mokkapati, Sudha; Skalsky, Stefan; Tang, Xiaoyan; Mitchell, Peter; Walton, Alex S.; Tan, Hark Hoe; Jagadish, Chennupati; Parkinson, Patrick.

In: Nano Letters, Vol. 19, No. 1, 09.01.2019, p. 362-368.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Optical Study of p-doping in GaAs nanowires for low-threshold and high-yield lasing

AU - Alanis, Juan Arturo

AU - Lysevych, Mykhaylo

AU - Burgess, Tim

AU - Saxena, Dhruv

AU - Mokkapati, Sudha

AU - Skalsky, Stefan

AU - Tang, Xiaoyan

AU - Mitchell, Peter

AU - Walton, Alex S.

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

AU - Parkinson, Patrick

PY - 2019/1/9

Y1 - 2019/1/9

N2 - Semiconductor nanowires suffer from significant non-radiative surface recombination; however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and, hence, quantum efficiency of emission, allowing the demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate (knr) to be (0.14 ± 0.04) ps-1 by modeling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ≥ 3 × 1018 cm-3 and lengths of ≥4 μm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ∼10 μJ cm-2 , and using a data-led filtering step, we present a method to simply identify subsets of nanowires with over 90% lasing yield.

AB - Semiconductor nanowires suffer from significant non-radiative surface recombination; however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and, hence, quantum efficiency of emission, allowing the demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate (knr) to be (0.14 ± 0.04) ps-1 by modeling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ≥ 3 × 1018 cm-3 and lengths of ≥4 μm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ∼10 μJ cm-2 , and using a data-led filtering step, we present a method to simply identify subsets of nanowires with over 90% lasing yield.

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