Abstract
We have investigated the quantum confinement of electronic states in GaAs/AlxGa1-xAs nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.
| Original language | English |
|---|---|
| Title of host publication | The Physics of Semiconductors |
| Subtitle of host publication | Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 |
| Editors | Thomas Ihn, Clemens Rössler , Aleksey Kozikov |
| Publisher | American Institute of Physics |
| Pages | 516-517 |
| Number of pages | 2 |
| Volume | 1566 |
| ISBN (Print) | 9780735411944 |
| DOIs | |
| Publication status | Published - 2013 |
| Event | International Conference on the Physics of Semiconductors (ICPS) 2012 - Zurich, Switzerland Duration: 29 Jul 2012 → 3 Aug 2012 Conference number: 31st |
Conference
| Conference | International Conference on the Physics of Semiconductors (ICPS) 2012 |
|---|---|
| Abbreviated title | ICPS 2012 |
| Country/Territory | Switzerland |
| City | Zurich |
| Period | 29/07/12 → 3/08/12 |
Keywords
- hexagonal theoretical model
- photoluminescence
- photoluminescence excitation
- quantum well
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