Open-circuit voltage improvement in tantalum-doped TiO2 nanocrystals

Feng Gu, Wenjuan Huang, Shufen Wang, Xing Cheng, Yanjie Hu, Pooi See Lee

Research output: Contribution to journalArticleResearchpeer-review

19 Citations (Scopus)


Enhanced electron concentration derived from Ta5+ doping is responsible for the open-circuit voltage improvement due to the upward shift of the Fermi level, but the oxygen defects generated retard the negative shift of the Fermi level. By mediating the trap states, highly efficient DSSC devices could be achieved.

Original languageEnglish
Pages (from-to)25679-25683
Number of pages5
JournalPhysical Chemistry Chemical Physics
Issue number47
Publication statusPublished - 21 Dec 2014
Externally publishedYes

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