One-bit non-volatile memory cell using memristor and transmission gates

Patrick W.C. Ho, Haider Abbas F. Almurib, T. Nandha Kumar

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

9 Citations (Scopus)

Abstract

In recent researches, much emphasis has been placed in developing non-volatile memories as candidates for replacement of volatile memories. Apart from non-volatility, memristive devices also have high switching speed, low energy consumption, and small device size. In this article, a novel one-bit memory cell using two transmission gates and one memristor (2TG1M) is proposed. SPICE simulations were performed to compare energy requirements per one-bit memory cell between the proposed memory cell and the conventional volatile one-bit SRAM cell. Simulations show that the SRAM memory cell requires between 73.034 pJ and 12.433 nJ to retain logic information for 10 years, while the proposed memory cell requires less than 1 pJ to hold logic information for up to 10 years. The proposed memory cell is also simulated against the popular one transistor one memristor (1T1M) non-volatile memory cell to show faster switching speed by 1.5 times. This work concludes the advantages of the proposed 2TG1M nonvolatile memory cell against volatile memory in terms of energy requirements, and against non-volatile memory in terms of switching speed.

Original languageEnglish
Title of host publication2014 2nd International Conference on Electronic Design, ICED 2014
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages244-248
Number of pages5
ISBN (Electronic)9781479961030
DOIs
Publication statusPublished - 2014
Externally publishedYes
EventInternational Conference on Electronic Design 2014 - Penang, Malaysia
Duration: 19 Aug 201421 Aug 2014
Conference number: 2nd
https://ieeexplore.ieee.org/xpl/conhome/6996693/proceeding (Proceedings)

Publication series

Name2014 2nd International Conference on Electronic Design, ICED 2014

Conference

ConferenceInternational Conference on Electronic Design 2014
Abbreviated titleICED 2014
CountryMalaysia
CityPenang
Period19/08/1421/08/14
Internet address

Keywords

  • Memristor
  • Non-volatile memory
  • RRAM

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