Numerical study on inlet operational conditions in the outside vapor deposition process

Jun He; Minshu Zhan; Baoyu Guo; Lihua Liu; Aibing Yu

doi:10.1016/j.powtec.2022.117915

Numerical study on inlet operational conditions in the outside vapor deposition process

Jun He, Minshu Zhan, Baoyu Guo, Lihua Liu, Aibing Yu

Chemical & Biological Engineering

Research output: Contribution to journal › Article › Research › peer-review

1 Citation (Scopus)

Abstract

Operational conditions at inlets of outside vapor deposition (OVD) play an important role in production yields and quality of optical fiber preforms. This work aims to numerically investigate the inner states and SiO₂ deposition performance of OVD under different inlet operational conditions. This is based on a recently developed Eulerian-Eulerian multiphase OVD process model which is extended to consider the SiO₂ particle nucleation and growth. The effects of inlet operational conditions are investigated in terms of the flow rate of SiCl₄/O₂-H₂-O₂, the mass fraction ratio of SiCl₄/O₂ as well as different carrier gases (H₂, N₂ or O₂). The simulations show that there exists an optimal SiCl₄/O₂ flow rate to yield the maximum deposition efficiency. While the deposition efficiency decreases with increasing either O₂ or H₂ flow rate. The reduction of the mass fraction ratio of SiCl₄/O₂ leads to a dramatic decline in deposition efficiency, whereas the averaged particle diameter of SiO₂ on the target is insensitive to the variations of the SiCl₄/O₂ mass fraction ratio. In addition, using H₂ or N₂ as carrier gas instead of O₂ leads to a nonuniform SiO₂ distribution and a significant decline in SiO₂ particle sizes on the target. The results reveal that selecting inlet operational conditions is an effective tool to adjust deposition efficiency and control the quality of SiO₂ particles on the target.

Original language	English
Article number	117915
Number of pages	16
Journal	Powder Technology
Volume	411
DOIs	https://doi.org/10.1016/j.powtec.2022.117915
Publication status	Published - Oct 2022

Keywords

Eulerian–Eulerian framework
Multiphase flow
Outside vapor deposition process
Particle nucleation and growth

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10.1016/j.powtec.2022.117915

Cite this

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title = "Numerical study on inlet operational conditions in the outside vapor deposition process",

abstract = "Operational conditions at inlets of outside vapor deposition (OVD) play an important role in production yields and quality of optical fiber preforms. This work aims to numerically investigate the inner states and SiO2 deposition performance of OVD under different inlet operational conditions. This is based on a recently developed Eulerian-Eulerian multiphase OVD process model which is extended to consider the SiO2 particle nucleation and growth. The effects of inlet operational conditions are investigated in terms of the flow rate of SiCl4/O2-H2-O2, the mass fraction ratio of SiCl4/O2 as well as different carrier gases (H2, N2 or O2). The simulations show that there exists an optimal SiCl4/O2 flow rate to yield the maximum deposition efficiency. While the deposition efficiency decreases with increasing either O2 or H2 flow rate. The reduction of the mass fraction ratio of SiCl4/O2 leads to a dramatic decline in deposition efficiency, whereas the averaged particle diameter of SiO2 on the target is insensitive to the variations of the SiCl4/O2 mass fraction ratio. In addition, using H2 or N2 as carrier gas instead of O2 leads to a nonuniform SiO2 distribution and a significant decline in SiO2 particle sizes on the target. The results reveal that selecting inlet operational conditions is an effective tool to adjust deposition efficiency and control the quality of SiO2 particles on the target.",

keywords = "Eulerian–Eulerian framework, Multiphase flow, Outside vapor deposition process, Particle nucleation and growth",

author = "Jun He and Minshu Zhan and Baoyu Guo and Lihua Liu and Aibing Yu",

note = "Funding Information: The authors acknowledge the financial support by the Australian Research Council (IH 140100035) and by Fasten Group Co. Ltd. Funding Information: The authors acknowledge the financial support by the Australian Research Council ( IH 140100035 ) and by Fasten Group Co., Ltd . Publisher Copyright: {\textcopyright} 2022",

year = "2022",

month = oct,

doi = "10.1016/j.powtec.2022.117915",

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journal = "Powder Technology",

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T1 - Numerical study on inlet operational conditions in the outside vapor deposition process

AU - He, Jun

AU - Zhan, Minshu

AU - Guo, Baoyu

AU - Liu, Lihua

AU - Yu, Aibing

N1 - Funding Information: The authors acknowledge the financial support by the Australian Research Council (IH 140100035) and by Fasten Group Co. Ltd. Funding Information: The authors acknowledge the financial support by the Australian Research Council ( IH 140100035 ) and by Fasten Group Co., Ltd . Publisher Copyright: © 2022

PY - 2022/10

Y1 - 2022/10

N2 - Operational conditions at inlets of outside vapor deposition (OVD) play an important role in production yields and quality of optical fiber preforms. This work aims to numerically investigate the inner states and SiO2 deposition performance of OVD under different inlet operational conditions. This is based on a recently developed Eulerian-Eulerian multiphase OVD process model which is extended to consider the SiO2 particle nucleation and growth. The effects of inlet operational conditions are investigated in terms of the flow rate of SiCl4/O2-H2-O2, the mass fraction ratio of SiCl4/O2 as well as different carrier gases (H2, N2 or O2). The simulations show that there exists an optimal SiCl4/O2 flow rate to yield the maximum deposition efficiency. While the deposition efficiency decreases with increasing either O2 or H2 flow rate. The reduction of the mass fraction ratio of SiCl4/O2 leads to a dramatic decline in deposition efficiency, whereas the averaged particle diameter of SiO2 on the target is insensitive to the variations of the SiCl4/O2 mass fraction ratio. In addition, using H2 or N2 as carrier gas instead of O2 leads to a nonuniform SiO2 distribution and a significant decline in SiO2 particle sizes on the target. The results reveal that selecting inlet operational conditions is an effective tool to adjust deposition efficiency and control the quality of SiO2 particles on the target.

AB - Operational conditions at inlets of outside vapor deposition (OVD) play an important role in production yields and quality of optical fiber preforms. This work aims to numerically investigate the inner states and SiO2 deposition performance of OVD under different inlet operational conditions. This is based on a recently developed Eulerian-Eulerian multiphase OVD process model which is extended to consider the SiO2 particle nucleation and growth. The effects of inlet operational conditions are investigated in terms of the flow rate of SiCl4/O2-H2-O2, the mass fraction ratio of SiCl4/O2 as well as different carrier gases (H2, N2 or O2). The simulations show that there exists an optimal SiCl4/O2 flow rate to yield the maximum deposition efficiency. While the deposition efficiency decreases with increasing either O2 or H2 flow rate. The reduction of the mass fraction ratio of SiCl4/O2 leads to a dramatic decline in deposition efficiency, whereas the averaged particle diameter of SiO2 on the target is insensitive to the variations of the SiCl4/O2 mass fraction ratio. In addition, using H2 or N2 as carrier gas instead of O2 leads to a nonuniform SiO2 distribution and a significant decline in SiO2 particle sizes on the target. The results reveal that selecting inlet operational conditions is an effective tool to adjust deposition efficiency and control the quality of SiO2 particles on the target.

KW - Eulerian–Eulerian framework

KW - Multiphase flow

KW - Outside vapor deposition process

KW - Particle nucleation and growth

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DO - 10.1016/j.powtec.2022.117915

M3 - Article

AN - SCOPUS:85138030977

SN - 0032-5910

VL - 411

JO - Powder Technology

JF - Powder Technology

M1 - 117915

ER -

Numerical study on inlet operational conditions in the outside vapor deposition process

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ARC Research Hub for Computational Particle Technology

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Numerical study on inlet operational conditions in the outside vapor deposition process

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ARC Research Hub for Computational Particle Technology

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