The important characteristics of actively mode-locked semiconductor lasers are identified and recent advances in numerical techniques for the optimisation of these characteristics are discussed. Numerical results from a comprehensive numerical model, the Transmission-Line Laser Model, illustrate the applicability of numerical models to the design and understanding of modelocked lasers.
|Number of pages||11|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|Publication status||Published - 17 Jun 1993|
|Event||Ultrafast Pulse Generation and Spectroscopy 1993 - Los Angeles, United States of America|
Duration: 17 Jan 1993 → 22 Jan 1993