Nucleation of chemical vapor deposited silicon nitride on silicon dioxide

M. Copel; P. R. Varekamp; D. W. Kisker; F. R. McFeely; K. E. Litz; M. M. Banaszak Holl

doi:10.1063/1.123100

Nucleation of chemical vapor deposited silicon nitride on silicon dioxide

M. Copel, P. R. Varekamp, D. W. Kisker, F. R. McFeely, K. E. Litz, M. M. Banaszak Holl

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8 Citations (Scopus)

Abstract

The nucleation of silicon nitride on silica by chemical vapor deposition using medium energy ion scattering followed by coalescence was examined. The growth mode merges only after 20-30A has been deposited and the interface formation is responsible for the growth mode. Both nitrides and oxide have low surface energies and the difference in surface free energies greatly affect the morphology. This is due to the arrangement of bond topology on the oxide surface which minimize the growth mode. As a result, there is an increase in energy barrier to wetting but little energy gained for de-wetting.

Original language	English
Pages (from-to)	1830-1832
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	13
DOIs	https://doi.org/10.1063/1.123100
Publication status	Published - 29 Mar 1999
Externally published	Yes

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10.1063/1.123100

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title = "Nucleation of chemical vapor deposited silicon nitride on silicon dioxide",

abstract = "The nucleation of silicon nitride on silica by chemical vapor deposition using medium energy ion scattering followed by coalescence was examined. The growth mode merges only after 20-30A has been deposited and the interface formation is responsible for the growth mode. Both nitrides and oxide have low surface energies and the difference in surface free energies greatly affect the morphology. This is due to the arrangement of bond topology on the oxide surface which minimize the growth mode. As a result, there is an increase in energy barrier to wetting but little energy gained for de-wetting.",

author = "M. Copel and Varekamp, {P. R.} and Kisker, {D. W.} and McFeely, {F. R.} and Litz, {K. E.} and {Banaszak Holl}, {M. M.}",

year = "1999",

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T1 - Nucleation of chemical vapor deposited silicon nitride on silicon dioxide

AU - Copel, M.

AU - Varekamp, P. R.

AU - Kisker, D. W.

AU - McFeely, F. R.

AU - Litz, K. E.

AU - Banaszak Holl, M. M.

PY - 1999/3/29

Y1 - 1999/3/29

N2 - The nucleation of silicon nitride on silica by chemical vapor deposition using medium energy ion scattering followed by coalescence was examined. The growth mode merges only after 20-30A has been deposited and the interface formation is responsible for the growth mode. Both nitrides and oxide have low surface energies and the difference in surface free energies greatly affect the morphology. This is due to the arrangement of bond topology on the oxide surface which minimize the growth mode. As a result, there is an increase in energy barrier to wetting but little energy gained for de-wetting.

AB - The nucleation of silicon nitride on silica by chemical vapor deposition using medium energy ion scattering followed by coalescence was examined. The growth mode merges only after 20-30A has been deposited and the interface formation is responsible for the growth mode. Both nitrides and oxide have low surface energies and the difference in surface free energies greatly affect the morphology. This is due to the arrangement of bond topology on the oxide surface which minimize the growth mode. As a result, there is an increase in energy barrier to wetting but little energy gained for de-wetting.

UR - http://www.scopus.com/inward/record.url?scp=0032608178&partnerID=8YFLogxK

U2 - 10.1063/1.123100

DO - 10.1063/1.123100

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SP - 1830

EP - 1832

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Nucleation of chemical vapor deposited silicon nitride on silicon dioxide

Abstract

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