Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si

J. M. Poate; J. Linnros; F. Priolo; D. C. Jacobson; J. L. Batstone; Michael O. Thompson

doi:10.1103/PhysRevLett.60.1322

Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si

J. M. Poate
, J. Linnros
, F. Priolo
, D. C. Jacobson
, J. L. Batstone
, Michael O. Thompson

Research output: Contribution to journal › Article › Research › peer-review

32 Citations (Scopus)

Abstract

The segregation and trapping of Au at the moving crystal-amorphous Si interface has been measured. Epitaxial crystallization was induced by 2.5-MeV Ar-ion irradiation. The Au segregation is analogous to behavior at liquid-solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6 A/sec. The Au is trapped in crystalline Si at concentrations some 10 orders of magnitude in excess of equilibrium concentration.

Original language	English
Pages (from-to)	1322-1325
Number of pages	4
Journal	Physical Review Letters
Volume	60
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevLett.60.1322
Publication status	Published - 1988
Externally published	Yes

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10.1103/PhysRevLett.60.1322

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abstract = "The segregation and trapping of Au at the moving crystal-amorphous Si interface has been measured. Epitaxial crystallization was induced by 2.5-MeV Ar-ion irradiation. The Au segregation is analogous to behavior at liquid-solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6 A/sec. The Au is trapped in crystalline Si at concentrations some 10 orders of magnitude in excess of equilibrium concentration.",

author = "Poate, \{J. M.\} and J. Linnros and F. Priolo and Jacobson, \{D. C.\} and Batstone, \{J. L.\} and Thompson, \{Michael O.\}",

year = "1988",

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T1 - Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si

AU - Poate, J. M.

AU - Linnros, J.

AU - Priolo, F.

AU - Jacobson, D. C.

AU - Batstone, J. L.

AU - Thompson, Michael O.

PY - 1988

Y1 - 1988

N2 - The segregation and trapping of Au at the moving crystal-amorphous Si interface has been measured. Epitaxial crystallization was induced by 2.5-MeV Ar-ion irradiation. The Au segregation is analogous to behavior at liquid-solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6 A/sec. The Au is trapped in crystalline Si at concentrations some 10 orders of magnitude in excess of equilibrium concentration.

AB - The segregation and trapping of Au at the moving crystal-amorphous Si interface has been measured. Epitaxial crystallization was induced by 2.5-MeV Ar-ion irradiation. The Au segregation is analogous to behavior at liquid-solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6 A/sec. The Au is trapped in crystalline Si at concentrations some 10 orders of magnitude in excess of equilibrium concentration.

UR - https://www.scopus.com/pages/publications/3643118761

U2 - 10.1103/PhysRevLett.60.1322

DO - 10.1103/PhysRevLett.60.1322

M3 - Article

AN - SCOPUS:3643118761

SN - 0031-9007

VL - 60

SP - 1322

EP - 1325

JO - Physical Review Letters

JF - Physical Review Letters

IS - 13

ER -

Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si

Abstract

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