Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si

J. M. Poate; J. Linnros; F. Priolo; D. C. Jacobson; J. L. Batstone; Michael O. Thompson

doi:10.1103/PhysRevLett.60.1322

Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si

J. M. Poate, J. Linnros, F. Priolo, D. C. Jacobson, J. L. Batstone, Michael O. Thompson

Research output: Contribution to journal › Article › Research › peer-review

31 Citations (Scopus)

Abstract

The segregation and trapping of Au at the moving crystal-amorphous Si interface has been measured. Epitaxial crystallization was induced by 2.5-MeV Ar-ion irradiation. The Au segregation is analogous to behavior at liquid-solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6 A/sec. The Au is trapped in crystalline Si at concentrations some 10 orders of magnitude in excess of equilibrium concentration.

Original language	English
Pages (from-to)	1322-1325
Number of pages	4
Journal	Physical Review Letters
Volume	60
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevLett.60.1322
Publication status	Published - 1988
Externally published	Yes

Access to Document

10.1103/PhysRevLett.60.1322

Cite this

@article{4a64f08f92ea44f88c17b211d348f917,

title = "Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si",

abstract = "The segregation and trapping of Au at the moving crystal-amorphous Si interface has been measured. Epitaxial crystallization was induced by 2.5-MeV Ar-ion irradiation. The Au segregation is analogous to behavior at liquid-solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6 A/sec. The Au is trapped in crystalline Si at concentrations some 10 orders of magnitude in excess of equilibrium concentration.",

author = "Poate, {J. M.} and J. Linnros and F. Priolo and Jacobson, {D. C.} and Batstone, {J. L.} and Thompson, {Michael O.}",

year = "1988",

doi = "10.1103/PhysRevLett.60.1322",

language = "English",

volume = "60",

pages = "1322--1325",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "13",

}

TY - JOUR

T1 - Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si

AU - Poate, J. M.

AU - Linnros, J.

AU - Priolo, F.

AU - Jacobson, D. C.

AU - Batstone, J. L.

AU - Thompson, Michael O.

PY - 1988

Y1 - 1988

N2 - The segregation and trapping of Au at the moving crystal-amorphous Si interface has been measured. Epitaxial crystallization was induced by 2.5-MeV Ar-ion irradiation. The Au segregation is analogous to behavior at liquid-solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6 A/sec. The Au is trapped in crystalline Si at concentrations some 10 orders of magnitude in excess of equilibrium concentration.

AB - The segregation and trapping of Au at the moving crystal-amorphous Si interface has been measured. Epitaxial crystallization was induced by 2.5-MeV Ar-ion irradiation. The Au segregation is analogous to behavior at liquid-solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6 A/sec. The Au is trapped in crystalline Si at concentrations some 10 orders of magnitude in excess of equilibrium concentration.

UR - http://www.scopus.com/inward/record.url?scp=3643118761&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.60.1322

DO - 10.1103/PhysRevLett.60.1322

M3 - Article

AN - SCOPUS:3643118761

VL - 60

SP - 1322

EP - 1325

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 13

ER -

Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si

Abstract

Access to Document

Other files and links

Cite this