The segregation and trapping of Au at the moving crystal-amorphous Si interface has been measured. Epitaxial crystallization was induced by 2.5-MeV Ar-ion irradiation. The Au segregation is analogous to behavior at liquid-solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6 A/sec. The Au is trapped in crystalline Si at concentrations some 10 orders of magnitude in excess of equilibrium concentration.
|Number of pages||4|
|Journal||Physical Review Letters|
|Publication status||Published - 1988|