Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si

J. M. Poate, J. Linnros, F. Priolo, D. C. Jacobson, J. L. Batstone, Michael O. Thompson

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Abstract

The segregation and trapping of Au at the moving crystal-amorphous Si interface has been measured. Epitaxial crystallization was induced by 2.5-MeV Ar-ion irradiation. The Au segregation is analogous to behavior at liquid-solid interfaces except that the interfacial segregation coefficient of 0.007 at 320°C is independent of velocity between 0.6 and 6 A/sec. The Au is trapped in crystalline Si at concentrations some 10 orders of magnitude in excess of equilibrium concentration.

Original languageEnglish
Pages (from-to)1322-1325
Number of pages4
JournalPhysical Review Letters
Volume60
Issue number13
DOIs
Publication statusPublished - 1988
Externally publishedYes

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