NiO thin film with an extremely high index (7 1 ¯ 4 ) on r-plane sapphire substrate

Xiang Ding, C. I. Sathish, Jiangtao Qu, Rongkun Zheng, Xun Geng, Xinwei Guan, Xiaojiang Yu, Mark B.H. Breese, Liang Qiao, Kiyonori Suzuki, Jiabao Yi

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Thin film epitaxy is essential for state-of-the-art semiconductor applications. The combination of different substrates and deposition methods leads to various crystallographic orientation relationships between thin films and substrates, which have a decisive impact on thin film performance. By utilizing pulsed laser deposition, we discovered a very high-index (7 1 ¯ 4 ) –oriented NiO thin film when deposited on r-plane (10 1 ¯ 2) sapphire substrates. The in-plane epitaxial relations are [ 13 1 ¯ ] NiO||[1 2 ¯ 10] Sapphire and [ 1 ¯ 12 ] NiO||[10 11 ¯ ] Sapphire , and the lattice mismatch is 3.2% and 0.4% along two directions, respectively. Exchange bias studies by the deposition of Co on NiO (111) and NiO (7 1 ¯ 4 ) show different behaviors, which may be associated with the spin density and alignment on the surface. Graphical abstract: [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)1623–1630
Number of pages8
JournalEmergent Materials
Volume6
DOIs
Publication statusPublished - 5 Sept 2023

Keywords

  • Epitaxy
  • Exchange bias
  • High index
  • NiO
  • R-plane sapphire

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