A new technique for modelling the dynamic spectral characteristics of DFB semiconductor lasers above threshold, which is based on the transmission-line laser model, is described. This includes the effects of index carrier dependence and longitudinal index variations. The time-domain responses and spectra of quarter-wave shifted grating devices are compared with unshifted devices under transient conditions.
|Title of host publication||IEE proceedings. Part J, Optoelectronics|
|Number of pages||8|
|Publication status||Published - 1 Jan 1990|