New approach towards imaging λ-DNA using scanning tunneling microscopy/spectroscopy (STM/STS)

Shirshendu Dey; Sushama Pethkar; Suguna D. Adyanthaya; Murali Sastry; C. V. Dharmadhikari

doi:10.1007/s12034-008-0049-6

New approach towards imaging λ-DNA using scanning tunneling microscopy/spectroscopy (STM/STS)

Shirshendu Dey, Sushama Pethkar, Suguna D. Adyanthaya, Murali Sastry, C. V. Dharmadhikari

Research output: Contribution to journal › Article › Research › peer-review

1 Citation (Scopus)

Abstract

A new methodology to anchor λ-DNA to silanized n-Si(111) surface using Langmuir Blodget trough was developed. The n-Si (111) was silanized by treating it with low molecular weight octyltrichlorosilane in toluene. Scanning tunneling microscopy (STM) image of λ-DNA on octyltrichlorosilane deposited Si substrate shows areas exhibiting arrayed structures of 700 nm length and 40 nm spacing. Scanning tunneling spectroscopy (STS) at different stages depict a broad distribution of defect states in the bandgap region of n-Si(111) which presumably facilitates tunneling through otherwise insulating DNA layer.

Original language	English
Pages (from-to)	309-312
Number of pages	4
Journal	Bulletin of Materials Science
Volume	31
Issue number	3
DOIs	https://doi.org/10.1007/s12034-008-0049-6
Publication status	Published - Jun 2008
Externally published	Yes

Keywords

DNA
Langmuir Blodget technique
Scanning tunneling microscopy
Silanization

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10.1007/s12034-008-0049-6

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title = "New approach towards imaging λ-DNA using scanning tunneling microscopy/spectroscopy (STM/STS)",

abstract = "A new methodology to anchor λ-DNA to silanized n-Si(111) surface using Langmuir Blodget trough was developed. The n-Si (111) was silanized by treating it with low molecular weight octyltrichlorosilane in toluene. Scanning tunneling microscopy (STM) image of λ-DNA on octyltrichlorosilane deposited Si substrate shows areas exhibiting arrayed structures of 700 nm length and 40 nm spacing. Scanning tunneling spectroscopy (STS) at different stages depict a broad distribution of defect states in the bandgap region of n-Si(111) which presumably facilitates tunneling through otherwise insulating DNA layer.",

keywords = "DNA, Langmuir Blodget technique, Scanning tunneling microscopy, Silanization",

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AU - Dey, Shirshendu

AU - Pethkar, Sushama

AU - Adyanthaya, Suguna D.

AU - Sastry, Murali

AU - Dharmadhikari, C. V.

PY - 2008/6

Y1 - 2008/6

N2 - A new methodology to anchor λ-DNA to silanized n-Si(111) surface using Langmuir Blodget trough was developed. The n-Si (111) was silanized by treating it with low molecular weight octyltrichlorosilane in toluene. Scanning tunneling microscopy (STM) image of λ-DNA on octyltrichlorosilane deposited Si substrate shows areas exhibiting arrayed structures of 700 nm length and 40 nm spacing. Scanning tunneling spectroscopy (STS) at different stages depict a broad distribution of defect states in the bandgap region of n-Si(111) which presumably facilitates tunneling through otherwise insulating DNA layer.

AB - A new methodology to anchor λ-DNA to silanized n-Si(111) surface using Langmuir Blodget trough was developed. The n-Si (111) was silanized by treating it with low molecular weight octyltrichlorosilane in toluene. Scanning tunneling microscopy (STM) image of λ-DNA on octyltrichlorosilane deposited Si substrate shows areas exhibiting arrayed structures of 700 nm length and 40 nm spacing. Scanning tunneling spectroscopy (STS) at different stages depict a broad distribution of defect states in the bandgap region of n-Si(111) which presumably facilitates tunneling through otherwise insulating DNA layer.

KW - DNA

KW - Langmuir Blodget technique

KW - Scanning tunneling microscopy

KW - Silanization

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ER -

New approach towards imaging λ-DNA using scanning tunneling microscopy/spectroscopy (STM/STS)

Abstract

Keywords

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