Neutral-current Hall effects in disordered graphene

Yilin Wang, Xinghan Cai, Janice Reutt-Robey, Michael Fuhrer

Research output: Contribution to journalArticleResearchpeer-review

29 Citations (Scopus)

Abstract

A nonlocal Hall bar geometry is used to detect neutral-current Hall effects in graphene on silicon dioxide. Disorder is tuned by the addition of Au or Ir adatoms in ultrahigh vacuum. A reproducible neutral-current Hall effect is found in both as-fabricated and adatom-decorated graphene. The Hall angle exhibits a complex but reproducible dependence on gate voltage and disorder, and notably breaks electron-hole symmetry. An exponential dependence on length between Hall and inverse Hall probes indicates a neutral-current relaxation length of approximately 300nm. The short relaxation length and lack of precession in a parallel magnetic field suggest that the neutral currents are valley currents. No signature of the spin-orbit coupling induced spin Hall effect is observed in the Au- or Ir-decorated graphene. The near lack of temperature dependence from 7 to 300 K is unprecedented among reports of valley Hall effect in graphene, and promising for using controlled disorder for room temperature neutral-current electronics.
Original languageEnglish
Article number161411
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B
Volume92
Issue number16
DOIs
Publication statusPublished - 2015

Cite this