Multilevel conductance switching of memory device through photoelectric effect

Changqing Ye, Qian Peng, Mingzhu Li, Jia Luo, Zhengming Tang, Jian Pei, Jianming Chen, Zhigang Shuai, Lei Jiang, Yanlin Song

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79 Citations (Scopus)

Abstract

A photoelectronic switch of a multilevel memory device has been achieved using a meta-conjugated donor-bridge-acceptor (DBA) molecule. Such a DBA optoelectronic molecule responds to both the optical and electrical stimuli. The device exhibits good electrical bistable switching behaviors under dark, with a large ON/OFF ratio more than 106. In cooperation with the UV light, photoelectronic ternary states are addressable in a bistable switching system. On the basis of the CV measurement, charge carriers transport modeling, quantum chemical calculation, and absorption spectra analysis, the mechanism of the DBA memory is suggested to be attributed to the substep charge transfer transition process. The capability of tailoring photoelectrical properties is a very promising strategy to explore the multilevel storage, and it will give a new opportunity for designing multifunctional devices.

Original languageEnglish
Pages (from-to)20053-20059
Number of pages7
JournalJournal of the American Chemical Society
Volume134
Issue number49
DOIs
Publication statusPublished - 12 Dec 2012
Externally publishedYes

Cite this

Ye, C., Peng, Q., Li, M., Luo, J., Tang, Z., Pei, J., Chen, J., Shuai, Z., Jiang, L., & Song, Y. (2012). Multilevel conductance switching of memory device through photoelectric effect. Journal of the American Chemical Society, 134(49), 20053-20059. https://doi.org/10.1021/ja305354y