Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ

Mark T. Edmonds, Jack Hellerstedt, Kane M. O'Donnell, Anton Tadich, Michael S. Fuhrer

Research output: Contribution to journalArticleResearchpeer-review

Abstract

We perform low-temperature transport and high-resolution photoelectron spectroscopy on 20 nm thin film topological Dirac semimetal Na3Bi grown by molecular beam epitaxy. We demonstrate efficient electron depletion ∼1013 cm-2 of Na3Bi via vacuum deposition of molecular F4-TCNQ without degrading the sample mobility. For samples with low as-grown n-type doping (1 × 1012 cm-2), F4-TCNQ doping can achieve charge neutrality and even a net p-type doping. Photoelectron spectroscopy and density functional theory are utilized to investigate the behavior of F4-TCNQ on the Na3Bi surface.

Original languageEnglish
Pages (from-to)16412-16418
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number25
DOIs
Publication statusPublished - 29 Jun 2016

Keywords

  • NaBi
  • surface transfer doping
  • thin film
  • topological Dirac semimetal

Cite this

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abstract = "We perform low-temperature transport and high-resolution photoelectron spectroscopy on 20 nm thin film topological Dirac semimetal Na3Bi grown by molecular beam epitaxy. We demonstrate efficient electron depletion ∼1013 cm-2 of Na3Bi via vacuum deposition of molecular F4-TCNQ without degrading the sample mobility. For samples with low as-grown n-type doping (1 × 1012 cm-2), F4-TCNQ doping can achieve charge neutrality and even a net p-type doping. Photoelectron spectroscopy and density functional theory are utilized to investigate the behavior of F4-TCNQ on the Na3Bi surface.",
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Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ. / Edmonds, Mark T.; Hellerstedt, Jack; O'Donnell, Kane M.; Tadich, Anton; Fuhrer, Michael S.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 25, 29.06.2016, p. 16412-16418.

Research output: Contribution to journalArticleResearchpeer-review

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T1 - Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ

AU - Edmonds, Mark T.

AU - Hellerstedt, Jack

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AU - Tadich, Anton

AU - Fuhrer, Michael S.

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AB - We perform low-temperature transport and high-resolution photoelectron spectroscopy on 20 nm thin film topological Dirac semimetal Na3Bi grown by molecular beam epitaxy. We demonstrate efficient electron depletion ∼1013 cm-2 of Na3Bi via vacuum deposition of molecular F4-TCNQ without degrading the sample mobility. For samples with low as-grown n-type doping (1 × 1012 cm-2), F4-TCNQ doping can achieve charge neutrality and even a net p-type doping. Photoelectron spectroscopy and density functional theory are utilized to investigate the behavior of F4-TCNQ on the Na3Bi surface.

KW - NaBi

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