Abstract
We developed a multiple sequential vacuum deposition method for the preparation of CsPbBr 3 film with pure phase. Meanwhile, we found the annealing humidity plays an important role for the growth of CsPbBr 3 crystal. By controlling the relative humidity at 30%, we obtained high-quality CsPbBr 3 film with large grain size. As a result, a PCE of 8.86% has been achieved in the all-inorganic PSCs with a planar structure of FTO/compact TiO 2 /CsPbBr 3 /carbon.
Original language | English |
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Pages (from-to) | 39-43 |
Number of pages | 5 |
Journal | Materials Science in Semiconductor Processing |
Volume | 98 |
DOIs | |
Publication status | Published - 1 Aug 2019 |