Abstract
The modulation response of a semiconductor laser can be enhanced by coupling it to an external cavity with frequency-selective feedback. This creates a comb of transmission bands where the modulation response is high, at the cavity round-trip frequency and its harmonics. In a previous publication, we related the bandwidths of these bands to the material and structural parameters of a bulk laser. We showed that a nonzero linewidth enhancement factor together with a nonzero intermediate facet reflectivity lead to deep nulls close to the peaks of these transmission bands. This suggests that quantum-well (QW) lasers, which have a low linewidth enhancement factor, may give a better performance than bulk lasers. To test this hypothesis, we have extended our analysis to model QW lasers coupled to a fiber grating. Carrier transport, carrier heating, intraband carrier fluctuations, and nonparabolic band structures are considered. We show that electron carrier transport and amplitude-phase coupling in the separate-confinment-heterostructure (SCH) layer contribute to the nulls in the modulation response. Therefore, the apparent advantage of having a reduced linewidth enhancement factor that we found in our previous analysis cannot be fully realized by using QW lasers.
Original language | English |
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Pages (from-to) | 716-728 |
Number of pages | 13 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 34 |
Issue number | 4 |
DOIs | |
Publication status | Published - Apr 1998 |
Externally published | Yes |
Keywords
- External cavity
- Fiber Bragg grating
- Modeling modulation
- Resonance enhancement
- SCH quantum-well lasers