Mobility degradation in nano-dimensional InAlAs/InGaAs single gate HEMT

Neetika Sharma; Pritam Sharma; Jyotika Jogi

doi:10.1109/TENCON.2016.7847977

Mobility degradation in nano-dimensional InAlAs/InGaAs single gate HEMT

Neetika Sharma, Pritam Sharma, Jyotika Jogi

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

1 Citation (Scopus)

Abstract

This paper presents an analytical model for ballistic transport in nano-scale InAlAs/InGaAs single gate HEMT. Effect of characteristic lengths of the nano-dimensional device on carrier transport is presented. The model accounts for quantization effects by solving a one-dimensional (1D) time-independent Schrodinger equation in nano-scale channel at equilibrium i.e. when no gate voltage is applied. The eigen energies, thus obtained are employed to evaluate the carrier concentration of the 2DEG. Consequently the effect of carrier mobility in the short channel and carrier ballisticity i.e. the probability of collision free transport below the scattering limited mean free path, are analyzed.

Original language	English
Title of host publication	Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016
Place of Publication	Piscataway NJ USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	142-146
Number of pages	5
ISBN (Electronic)	9781509025961, 9781509025978, 9781509025985
DOIs	https://doi.org/10.1109/TENCON.2016.7847977
Publication status	Published - 8 Feb 2017
Externally published	Yes
Event	IEEE Tencon (IEEE Region 10 Conference) 2016 - Singapore, Singapore Duration: 22 Nov 2016 → 25 Nov 2016 https://ieeexplore.ieee.org/xpl/conhome/7838019/proceeding (Proceedings)

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN (Print)	2159-3442
ISSN (Electronic)	2159-3450

Conference

Conference	IEEE Tencon (IEEE Region 10 Conference) 2016
Abbreviated title	TENCON 2016
Country/Territory	Singapore
City	Singapore
Period	22/11/16 → 25/11/16
Internet address	https://ieeexplore.ieee.org/xpl/conhome/7838019/proceeding (Proceedings)

Keywords

ballistic mobility
ballistic transport
ballisticity
degenerate semiconductor
nano-dimensional devices

Access to Document

10.1109/TENCON.2016.7847977

Cite this

Sharma, N., Sharma, P., & Jogi, J. (2017). Mobility degradation in nano-dimensional InAlAs/InGaAs single gate HEMT. In Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016 (pp. 142-146). Article 7847977 (IEEE Region 10 Annual International Conference, Proceedings/TENCON). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/TENCON.2016.7847977

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title = "Mobility degradation in nano-dimensional InAlAs/InGaAs single gate HEMT",

abstract = "This paper presents an analytical model for ballistic transport in nano-scale InAlAs/InGaAs single gate HEMT. Effect of characteristic lengths of the nano-dimensional device on carrier transport is presented. The model accounts for quantization effects by solving a one-dimensional (1D) time-independent Schrodinger equation in nano-scale channel at equilibrium i.e. when no gate voltage is applied. The eigen energies, thus obtained are employed to evaluate the carrier concentration of the 2DEG. Consequently the effect of carrier mobility in the short channel and carrier ballisticity i.e. the probability of collision free transport below the scattering limited mean free path, are analyzed.",

keywords = "ballistic mobility, ballistic transport, ballisticity, degenerate semiconductor, nano-dimensional devices",

author = "Neetika Sharma and Pritam Sharma and Jyotika Jogi",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; IEEE Tencon (IEEE Region 10 Conference) 2016, TENCON 2016 ; Conference date: 22-11-2016 Through 25-11-2016",

year = "2017",

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doi = "10.1109/TENCON.2016.7847977",

language = "English",

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Sharma, N, Sharma, P & Jogi, J 2017, Mobility degradation in nano-dimensional InAlAs/InGaAs single gate HEMT. in Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016., 7847977, IEEE Region 10 Annual International Conference, Proceedings/TENCON, IEEE, Institute of Electrical and Electronics Engineers, Piscataway NJ USA, pp. 142-146, IEEE Tencon (IEEE Region 10 Conference) 2016, Singapore, Singapore, 22/11/16. https://doi.org/10.1109/TENCON.2016.7847977

Mobility degradation in nano-dimensional InAlAs/InGaAs single gate HEMT. / Sharma, Neetika; Sharma, Pritam; Jogi, Jyotika.
Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016. Piscataway NJ USA: IEEE, Institute of Electrical and Electronics Engineers, 2017. p. 142-146 7847977 (IEEE Region 10 Annual International Conference, Proceedings/TENCON).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

TY - GEN

T1 - Mobility degradation in nano-dimensional InAlAs/InGaAs single gate HEMT

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N2 - This paper presents an analytical model for ballistic transport in nano-scale InAlAs/InGaAs single gate HEMT. Effect of characteristic lengths of the nano-dimensional device on carrier transport is presented. The model accounts for quantization effects by solving a one-dimensional (1D) time-independent Schrodinger equation in nano-scale channel at equilibrium i.e. when no gate voltage is applied. The eigen energies, thus obtained are employed to evaluate the carrier concentration of the 2DEG. Consequently the effect of carrier mobility in the short channel and carrier ballisticity i.e. the probability of collision free transport below the scattering limited mean free path, are analyzed.

AB - This paper presents an analytical model for ballistic transport in nano-scale InAlAs/InGaAs single gate HEMT. Effect of characteristic lengths of the nano-dimensional device on carrier transport is presented. The model accounts for quantization effects by solving a one-dimensional (1D) time-independent Schrodinger equation in nano-scale channel at equilibrium i.e. when no gate voltage is applied. The eigen energies, thus obtained are employed to evaluate the carrier concentration of the 2DEG. Consequently the effect of carrier mobility in the short channel and carrier ballisticity i.e. the probability of collision free transport below the scattering limited mean free path, are analyzed.

KW - ballistic mobility

KW - ballistic transport

KW - ballisticity

KW - degenerate semiconductor

KW - nano-dimensional devices

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BT - Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016

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Sharma N, Sharma P, Jogi J. Mobility degradation in nano-dimensional InAlAs/InGaAs single gate HEMT. In Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016. Piscataway NJ USA: IEEE, Institute of Electrical and Electronics Engineers. 2017. p. 142-146. 7847977. (IEEE Region 10 Annual International Conference, Proceedings/TENCON). doi: 10.1109/TENCON.2016.7847977

Mobility degradation in nano-dimensional InAlAs/InGaAs single gate HEMT

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Keywords

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