Minimisation of spanning dislocations in the crystallisation of deep amorphous silicon wells through the alignment of volume edges with fast growth directions

Amelia Chi Ying Liu; J C McCallum

Minimisation of spanning dislocations in the crystallisation of deep amorphous silicon wells through the alignment of volume edges with fast growth directions

Research output: Contribution to journal › Article › Research › peer-review

Original language	English
Pages (from-to)	167 - 175
Number of pages	9
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	B97
Publication status	Published - 2003
Externally published	Yes

Cite this

@article{753ccf8e93044459bcf5e96b36654d77,

title = "Minimisation of spanning dislocations in the crystallisation of deep amorphous silicon wells through the alignment of volume edges with fast growth directions",

author = "Liu, {Amelia Chi Ying} and McCallum, {J C}",

year = "2003",

language = "English",

volume = "B97",

pages = "167 -- 175",

journal = "Materials Science and Engineering B: Advanced Functional Solid-state Materials",

issn = "0921-5107",

publisher = "Elsevier",

}

Minimisation of spanning dislocations in the crystallisation of deep amorphous silicon wells through the alignment of volume edges with fast growth directions. / Liu, Amelia Chi Ying; McCallum, J C.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. B97, 2003, p. 167 - 175.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - Minimisation of spanning dislocations in the crystallisation of deep amorphous silicon wells through the alignment of volume edges with fast growth directions

AU - Liu, Amelia Chi Ying

AU - McCallum, J C

PY - 2003

Y1 - 2003

M3 - Article

SN - 0921-5107

VL - B97

SP - 167

EP - 175

JO - Materials Science and Engineering B: Advanced Functional Solid-state Materials

JF - Materials Science and Engineering B: Advanced Functional Solid-state Materials

ER -