Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations

Yanling Tian; Zhenxing Li; Weiguo Gao; Kunhai Cai; Fu Wang; Dawei Zhang; Bijan Shirinzadeh; Sergej Fatikow

doi:10.1063/1.4844475

Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations

Yanling Tian
, Zhenxing Li
, Weiguo Gao
, Kunhai Cai
, Fu Wang
, Dawei Zhang
, Bijan Shirinzadeh
, Sergej Fatikow

Mechanical & Aerospace Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

23 Citations (Scopus)

Original language	English
Title of host publication	Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)
Editors	Anna Cavallini, Stefan K Estreicher
Place of Publication	College Park MD USA
Publisher	American Institute of Physics
Number of pages	9
DOIs	https://doi.org/10.1063/1.4844475
Publication status	Published - 2014
Event	International Conference on Defects in Semiconductors (ICDS) 2013 - Bologna, Italy Duration: 22 Jul 2013 → 26 Jul 2013 Conference number: 27th http://aip.scitation.org/doi/pdf/10.1063/1.4865592 (Preface of the Conference Proceedngs) http://aip.scitation.org/doi/pdf/10.1063/v1583.frontmatter (Frontmatter)

Publication series

Name	Journal of Applied Physics
Publisher	American Institute of Physics
Number	1
Volume	115
ISSN (Print)	0021-8979

Conference

Conference	International Conference on Defects in Semiconductors (ICDS) 2013
Abbreviated title	ICDS 2013
Country/Territory	Italy
City	Bologna
Period	22/07/13 → 26/07/13
Other	The proceedings are published in part in the Journal of Applied Physics (mostly by invited papers) and in part in the AIP Proceedings (mostly contributed papers).
Internet address	http://aip.scitation.org/doi/pdf/10.1063/1.4865592 (Preface of the Conference Proceedngs) http://aip.scitation.org/doi/pdf/10.1063/v1583.frontmatter (Frontmatter)

Access to Document

10.1063/1.4844475

Cite this

Tian, Y., Li, Z., Gao, W., Cai, K., Wang, F., Zhang, D., Shirinzadeh, B., & Fatikow, S. (2014). Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. In A. Cavallini, & S. K. Estreicher (Eds.), Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013) Article 014308 (Journal of Applied Physics; Vol. 115, No. 1). American Institute of Physics. https://doi.org/10.1063/1.4844475

Tian, Yanling ; Li, Zhenxing ; Gao, Weiguo et al. / Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013). editor / Anna Cavallini ; Stefan K Estreicher. College Park MD USA : American Institute of Physics, 2014. (Journal of Applied Physics; 1).

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title = "Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations",

author = "Yanling Tian and Zhenxing Li and Weiguo Gao and Kunhai Cai and Fu Wang and Dawei Zhang and Bijan Shirinzadeh and Sergej Fatikow",

year = "2014",

doi = "10.1063/1.4844475",

language = "English",

series = "Journal of Applied Physics",

publisher = "American Institute of Physics",

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booktitle = "Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)",

address = "United States of America",

note = "International Conference on Defects in Semiconductors (ICDS) 2013, ICDS 2013 ; Conference date: 22-07-2013 Through 26-07-2013",

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Tian, Y, Li, Z, Gao, W, Cai, K, Wang, F, Zhang, D, Shirinzadeh, B & Fatikow, S 2014, Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. in A Cavallini & SK Estreicher (eds), Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)., 014308, Journal of Applied Physics, no. 1, vol. 115, American Institute of Physics, College Park MD USA, International Conference on Defects in Semiconductors (ICDS) 2013, Bologna, Italy, 22/07/13. https://doi.org/10.1063/1.4844475

Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. / Tian, Yanling; Li, Zhenxing; Gao, Weiguo et al.
Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013). ed. / Anna Cavallini; Stefan K Estreicher. College Park MD USA: American Institute of Physics, 2014. 014308 (Journal of Applied Physics; Vol. 115, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

TY - GEN

T1 - Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations

AU - Tian, Yanling

AU - Li, Zhenxing

AU - Gao, Weiguo

AU - Cai, Kunhai

AU - Wang, Fu

AU - Zhang, Dawei

AU - Shirinzadeh, Bijan

AU - Fatikow, Sergej

N1 - Conference code: 27th

PY - 2014

Y1 - 2014

U2 - 10.1063/1.4844475

DO - 10.1063/1.4844475

M3 - Conference Paper

T3 - Journal of Applied Physics

BT - Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)

A2 - Cavallini, Anna

A2 - Estreicher, Stefan K

PB - American Institute of Physics

CY - College Park MD USA

T2 - International Conference on Defects in Semiconductors (ICDS) 2013

Y2 - 22 July 2013 through 26 July 2013

ER -

Tian Y, Li Z, Gao W, Cai K, Wang F, Zhang D et al. Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. In Cavallini A, Estreicher SK, editors, Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013). College Park MD USA: American Institute of Physics. 2014. 014308. (Journal of Applied Physics; 1). doi: 10.1063/1.4844475