Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations

Yanling Tian, Zhenxing Li, Weiguo Gao, Kunhai Cai, Fu Wang, Dawei Zhang, Bijan Shirinzadeh, Sergej Fatikow

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

10 Citations (Scopus)
Original languageEnglish
Title of host publicationJournal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)
EditorsAnna Cavallini, Stefan K Estreicher
Place of PublicationCollege Park MD USA
PublisherAmerican Institute of Physics
Pages1 - 9
Number of pages9
Volume115
ISBN (Print)0021-8979
DOIs
Publication statusPublished - 2014
EventInternational Conference on Defects in Semiconductors (ICDS) 2013 - Bologna, Italy
Duration: 22 Jul 201326 Jul 2013
Conference number: 27th
http://aip.scitation.org/doi/pdf/10.1063/1.4865592 (Preface of the Conference Proceedngs)
http://aip.scitation.org/doi/pdf/10.1063/v1583.frontmatter (Frontmatter)

Conference

ConferenceInternational Conference on Defects in Semiconductors (ICDS) 2013
Abbreviated titleICDS 2013
CountryItaly
CityBologna
Period22/07/1326/07/13
OtherThe proceedings are published in part in the Journal of Applied Physics
(mostly by invited papers) and in part in the AIP Proceedings (mostly contributed papers).
Internet address

Cite this

Tian, Y., Li, Z., Gao, W., Cai, K., Wang, F., Zhang, D., ... Fatikow, S. (2014). Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. In A. Cavallini, & S. K. Estreicher (Eds.), Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013) (Vol. 115, pp. 1 - 9). College Park MD USA: American Institute of Physics. https://doi.org/10.1063/1.4844475
Tian, Yanling ; Li, Zhenxing ; Gao, Weiguo ; Cai, Kunhai ; Wang, Fu ; Zhang, Dawei ; Shirinzadeh, Bijan ; Fatikow, Sergej. / Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013). editor / Anna Cavallini ; Stefan K Estreicher. Vol. 115 College Park MD USA : American Institute of Physics, 2014. pp. 1 - 9
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title = "Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations",
author = "Yanling Tian and Zhenxing Li and Weiguo Gao and Kunhai Cai and Fu Wang and Dawei Zhang and Bijan Shirinzadeh and Sergej Fatikow",
year = "2014",
doi = "10.1063/1.4844475",
language = "English",
isbn = "0021-8979",
volume = "115",
pages = "1 -- 9",
editor = "Anna Cavallini and Estreicher, {Stefan K}",
booktitle = "Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)",
publisher = "American Institute of Physics",
address = "United States of America",

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Tian, Y, Li, Z, Gao, W, Cai, K, Wang, F, Zhang, D, Shirinzadeh, B & Fatikow, S 2014, Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. in A Cavallini & SK Estreicher (eds), Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013). vol. 115, American Institute of Physics, College Park MD USA, pp. 1 - 9, International Conference on Defects in Semiconductors (ICDS) 2013, Bologna, Italy, 22/07/13. https://doi.org/10.1063/1.4844475

Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. / Tian, Yanling; Li, Zhenxing; Gao, Weiguo; Cai, Kunhai; Wang, Fu; Zhang, Dawei; Shirinzadeh, Bijan; Fatikow, Sergej.

Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013). ed. / Anna Cavallini; Stefan K Estreicher. Vol. 115 College Park MD USA : American Institute of Physics, 2014. p. 1 - 9.

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

TY - GEN

T1 - Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations

AU - Tian, Yanling

AU - Li, Zhenxing

AU - Gao, Weiguo

AU - Cai, Kunhai

AU - Wang, Fu

AU - Zhang, Dawei

AU - Shirinzadeh, Bijan

AU - Fatikow, Sergej

PY - 2014

Y1 - 2014

UR - http://goo.gl/bygcSP

U2 - 10.1063/1.4844475

DO - 10.1063/1.4844475

M3 - Conference Paper

SN - 0021-8979

VL - 115

SP - 1

EP - 9

BT - Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)

A2 - Cavallini, Anna

A2 - Estreicher, Stefan K

PB - American Institute of Physics

CY - College Park MD USA

ER -

Tian Y, Li Z, Gao W, Cai K, Wang F, Zhang D et al. Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. In Cavallini A, Estreicher SK, editors, Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013). Vol. 115. College Park MD USA: American Institute of Physics. 2014. p. 1 - 9 https://doi.org/10.1063/1.4844475