| Original language | English |
|---|---|
| Title of host publication | Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013) |
| Editors | Anna Cavallini, Stefan K Estreicher |
| Place of Publication | College Park MD USA |
| Publisher | American Institute of Physics |
| Pages | 1 - 9 |
| Number of pages | 9 |
| Volume | 115 |
| ISBN (Print) | 0021-8979 |
| DOIs | |
| Publication status | Published - 2014 |
| Event | International Conference on Defects in Semiconductors (ICDS) 2013 - Bologna, Italy Duration: 22 Jul 2013 → 26 Jul 2013 Conference number: 27th http://aip.scitation.org/doi/pdf/10.1063/1.4865592 (Preface of the Conference Proceedngs) http://aip.scitation.org/doi/pdf/10.1063/v1583.frontmatter (Frontmatter) |
Conference
| Conference | International Conference on Defects in Semiconductors (ICDS) 2013 |
|---|---|
| Abbreviated title | ICDS 2013 |
| Country | Italy |
| City | Bologna |
| Period | 22/07/13 → 26/07/13 |
| Other | The proceedings are published in part in the Journal of Applied Physics (mostly by invited papers) and in part in the AIP Proceedings (mostly contributed papers). |
| Internet address |
|
Cite this
}
Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. / Tian, Yanling; Li, Zhenxing; Gao, Weiguo; Cai, Kunhai; Wang, Fu; Zhang, Dawei; Shirinzadeh, Bijan; Fatikow, Sergej.
Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013). ed. / Anna Cavallini; Stefan K Estreicher. Vol. 115 College Park MD USA : American Institute of Physics, 2014. p. 1 - 9.Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review
TY - GEN
T1 - Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations
AU - Tian, Yanling
AU - Li, Zhenxing
AU - Gao, Weiguo
AU - Cai, Kunhai
AU - Wang, Fu
AU - Zhang, Dawei
AU - Shirinzadeh, Bijan
AU - Fatikow, Sergej
PY - 2014
Y1 - 2014
UR - http://goo.gl/bygcSP
U2 - 10.1063/1.4844475
DO - 10.1063/1.4844475
M3 - Conference Paper
SN - 0021-8979
VL - 115
SP - 1
EP - 9
BT - Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)
A2 - Cavallini, Anna
A2 - Estreicher, Stefan K
PB - American Institute of Physics
CY - College Park MD USA
ER -