Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations

Yanling Tian, Zhenxing Li, Weiguo Gao, Kunhai Cai, Fu Wang, Dawei Zhang, Bijan Shirinzadeh, Sergej Fatikow

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

17 Citations (Scopus)
Original languageEnglish
Title of host publicationJournal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)
EditorsAnna Cavallini, Stefan K Estreicher
Place of PublicationCollege Park MD USA
PublisherAmerican Institute of Physics
Pages1 - 9
Number of pages9
ISBN (Print)0021-8979
Publication statusPublished - 2014
EventInternational Conference on Defects in Semiconductors (ICDS) 2013 - Bologna, Italy
Duration: 22 Jul 201326 Jul 2013
Conference number: 27th (Preface of the Conference Proceedngs) (Frontmatter)


ConferenceInternational Conference on Defects in Semiconductors (ICDS) 2013
Abbreviated titleICDS 2013
OtherThe proceedings are published in part in the Journal of Applied Physics
(mostly by invited papers) and in part in the AIP Proceedings (mostly contributed papers).
Internet address

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