Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations

Yanling Tian; Zhenxing Li; Weiguo Gao; Kunhai Cai; Fu Wang; Dawei Zhang; Bijan Shirinzadeh; Sergej Fatikow

doi:10.1063/1.4844475

Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations

Yanling Tian, Zhenxing Li, Weiguo Gao, Kunhai Cai, Fu Wang, Dawei Zhang, Bijan Shirinzadeh, Sergej Fatikow

Mechanical & Aerospace Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

15 Citations (Scopus)

Original language	English
Title of host publication	Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)
Editors	Anna Cavallini, Stefan K Estreicher
Place of Publication	College Park MD USA
Publisher	American Institute of Physics
Pages	1 - 9
Number of pages	9
Volume	115
ISBN (Print)	0021-8979
DOIs	https://doi.org/10.1063/1.4844475
Publication status	Published - 2014
Event	International Conference on Defects in Semiconductors (ICDS) 2013 - Bologna, Italy Duration: 22 Jul 2013 → 26 Jul 2013 Conference number: 27th http://aip.scitation.org/doi/pdf/10.1063/1.4865592 (Preface of the Conference Proceedngs) http://aip.scitation.org/doi/pdf/10.1063/v1583.frontmatter (Frontmatter)

Conference

Conference	International Conference on Defects in Semiconductors (ICDS) 2013
Abbreviated title	ICDS 2013
Country	Italy
City	Bologna
Period	22/07/13 → 26/07/13
Other	The proceedings are published in part in the Journal of Applied Physics (mostly by invited papers) and in part in the AIP Proceedings (mostly contributed papers).
Internet address	http://aip.scitation.org/doi/pdf/10.1063/1.4865592 (Preface of the Conference Proceedngs) http://aip.scitation.org/doi/pdf/10.1063/v1583.frontmatter (Frontmatter)

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10.1063/1.4844475

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Cite this

Tian, Y., Li, Z., Gao, W., Cai, K., Wang, F., Zhang, D., Shirinzadeh, B., & Fatikow, S. (2014). Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. In A. Cavallini, & S. K. Estreicher (Eds.), Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013) (Vol. 115, pp. 1 - 9). American Institute of Physics. https://doi.org/10.1063/1.4844475

Tian, Yanling ; Li, Zhenxing ; Gao, Weiguo ; Cai, Kunhai ; Wang, Fu ; Zhang, Dawei ; Shirinzadeh, Bijan ; Fatikow, Sergej. / Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013). editor / Anna Cavallini ; Stefan K Estreicher. Vol. 115 College Park MD USA : American Institute of Physics, 2014. pp. 1 - 9

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title = "Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations",

author = "Yanling Tian and Zhenxing Li and Weiguo Gao and Kunhai Cai and Fu Wang and Dawei Zhang and Bijan Shirinzadeh and Sergej Fatikow",

year = "2014",

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language = "English",

isbn = "0021-8979",

volume = "115",

pages = "1 -- 9",

editor = "Anna Cavallini and Estreicher, {Stefan K}",

booktitle = "Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)",

publisher = "American Institute of Physics",

address = "United States of America",

note = "International Conference on Defects in Semiconductors (ICDS) 2013, ICDS 2013 ; Conference date: 22-07-2013 Through 26-07-2013",

url = "http://aip.scitation.org/doi/pdf/10.1063/1.4865592, http://aip.scitation.org/doi/pdf/10.1063/v1583.frontmatter",

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Tian, Y, Li, Z, Gao, W, Cai, K, Wang, F, Zhang, D, Shirinzadeh, B & Fatikow, S 2014, Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. in A Cavallini & SK Estreicher (eds), Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013). vol. 115, American Institute of Physics, College Park MD USA, pp. 1 - 9, International Conference on Defects in Semiconductors (ICDS) 2013, Bologna, Italy, 22/07/13. https://doi.org/10.1063/1.4844475

Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. / Tian, Yanling; Li, Zhenxing; Gao, Weiguo; Cai, Kunhai; Wang, Fu; Zhang, Dawei; Shirinzadeh, Bijan; Fatikow, Sergej.

Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013). ed. / Anna Cavallini; Stefan K Estreicher. Vol. 115 College Park MD USA : American Institute of Physics, 2014. p. 1 - 9.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

TY - GEN

T1 - Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations

AU - Tian, Yanling

AU - Li, Zhenxing

AU - Gao, Weiguo

AU - Cai, Kunhai

AU - Wang, Fu

AU - Zhang, Dawei

AU - Shirinzadeh, Bijan

AU - Fatikow, Sergej

N1 - Conference code: 27th

PY - 2014

Y1 - 2014

UR - http://goo.gl/bygcSP

U2 - 10.1063/1.4844475

DO - 10.1063/1.4844475

M3 - Conference Paper

SN - 0021-8979

VL - 115

SP - 1

EP - 9

BT - Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)

A2 - Cavallini, Anna

A2 - Estreicher, Stefan K

PB - American Institute of Physics

CY - College Park MD USA

T2 - International Conference on Defects in Semiconductors (ICDS) 2013

Y2 - 22 July 2013 through 26 July 2013

ER -

Tian Y, Li Z, Gao W, Cai K, Wang F, Zhang D et al. Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations. In Cavallini A, Estreicher SK, editors, Journal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013). Vol. 115. College Park MD USA: American Institute of Physics. 2014. p. 1 - 9 https://doi.org/10.1063/1.4844475