Mechanical properties investigation of monolayer h-BN sheet under in-plane shear displacement using molecular dynamics simulations

Yanling Tian, Zhenxing Li, Weiguo Gao, Kunhai Cai, Fu Wang, Dawei Zhang, Bijan Shirinzadeh, Sergej Fatikow

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

15 Citations (Scopus)
Original languageEnglish
Title of host publicationJournal of Applied Physics: Invited Papers from the 27th International Conference on Defects in Semiconductors (ICDS-2013)
EditorsAnna Cavallini, Stefan K Estreicher
Place of PublicationCollege Park MD USA
PublisherAmerican Institute of Physics
Pages1 - 9
Number of pages9
Volume115
ISBN (Print)0021-8979
DOIs
Publication statusPublished - 2014
EventInternational Conference on Defects in Semiconductors (ICDS) 2013 - Bologna, Italy
Duration: 22 Jul 201326 Jul 2013
Conference number: 27th
http://aip.scitation.org/doi/pdf/10.1063/1.4865592 (Preface of the Conference Proceedngs)
http://aip.scitation.org/doi/pdf/10.1063/v1583.frontmatter (Frontmatter)

Conference

ConferenceInternational Conference on Defects in Semiconductors (ICDS) 2013
Abbreviated titleICDS 2013
CountryItaly
CityBologna
Period22/07/1326/07/13
OtherThe proceedings are published in part in the Journal of Applied Physics
(mostly by invited papers) and in part in the AIP Proceedings (mostly contributed papers).
Internet address

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