Maximization of gain in slow-light silicon Raman amplifiers

Ivan D. Rukhlenko, Malin Premaratne, Govind P. Agrawal

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7 Citations (Scopus)


We theoretically study the problem of Raman gain maximization in uniform silicon photonic-crystal waveguides supporting slow optical modes. For the first time, an exact solution to this problem is obtained within the framework of the undepleted-pump approximation. Specifically, we derive analytical expressions for the maximum signal gain, optimal input pump power, and optimal length of a silicon Raman amplifier and demonstrate that the ultimate gain is achieved when the pump beam propagates at its maximum speed. If the signals group velocity can be reduced by a factor of 10 compared to its value in a bulk silicon, it may result in ultrahigh gains exceeding 100dB. We also optimize the device parameters of a silicon Raman amplifier in the regime of strong pump depletion and come up with general design guidelines that can be used in practice. 

Original languageEnglish
Article number581810
Number of pages7
JournalInternational Journal of Optics
Publication statusPublished - 2011

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