Magneto-transport and electronic structures in MoSi2 bulks and thin films with different orientations

Wafa Afzal; Frank Fei Yun; Zhi Li; Zengji Yue; Weiyao Zhao; Lina Sang; Guangsai Yang; Yahua He; Germanas Peleckis; Michael Fuhrer; Xiaolin Wang

doi:10.1016/j.jallcom.2020.157670

Magneto-transport and electronic structures in MoSi₂ bulks and thin films with different orientations

Wafa Afzal, Frank Fei Yun, Zhi Li, Zengji Yue, Weiyao Zhao, Lina Sang, Guangsai Yang, Yahua He, Germanas Peleckis, Michael Fuhrer, Xiaolin Wang

School of Physics and Astronomy

Research output: Contribution to journal › Article › Research › peer-review

5 Citations (Scopus)

Abstract

We report a comprehensive study of magneto-transport properties in MoSi₂ bulk and thin films. Textured MoSi₂ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi₂ single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperatures, the MR of the textured thin films show weak anti-localization behaviour owing to the spin orbit coupling effects. Our first principle calculation show the presence of surface states in this material. The resistivity of all the MoSi₂ thin films is significantly low and nearly independent of the temperature, which is important for electronic devices.

Original language	English
Article number	157670
Number of pages	8
Journal	Journal of Alloys and Compounds
Volume	858
DOIs	https://doi.org/10.1016/j.jallcom.2020.157670
Publication status	Published - 25 Mar 2021

Keywords

Magnetoresistance
MoSi
Spin-orbit coupling
Surface states
Weak anti-localization

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10.1016/j.jallcom.2020.157670

Cite this

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title = "Magneto-transport and electronic structures in MoSi2 bulks and thin films with different orientations",

abstract = "We report a comprehensive study of magneto-transport properties in MoSi2 bulk and thin films. Textured MoSi2 thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi2 single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperatures, the MR of the textured thin films show weak anti-localization behaviour owing to the spin orbit coupling effects. Our first principle calculation show the presence of surface states in this material. The resistivity of all the MoSi2 thin films is significantly low and nearly independent of the temperature, which is important for electronic devices.",

keywords = "Magnetoresistance, MoSi, Spin-orbit coupling, Surface states, Weak anti-localization",

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T1 - Magneto-transport and electronic structures in MoSi2 bulks and thin films with different orientations

AU - Afzal, Wafa

AU - Yun, Frank Fei

AU - Li, Zhi

AU - Yue, Zengji

AU - Zhao, Weiyao

AU - Sang, Lina

AU - Yang, Guangsai

AU - He, Yahua

AU - Peleckis, Germanas

AU - Fuhrer, Michael

AU - Wang, Xiaolin

PY - 2021/3/25

Y1 - 2021/3/25

N2 - We report a comprehensive study of magneto-transport properties in MoSi2 bulk and thin films. Textured MoSi2 thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi2 single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperatures, the MR of the textured thin films show weak anti-localization behaviour owing to the spin orbit coupling effects. Our first principle calculation show the presence of surface states in this material. The resistivity of all the MoSi2 thin films is significantly low and nearly independent of the temperature, which is important for electronic devices.

AB - We report a comprehensive study of magneto-transport properties in MoSi2 bulk and thin films. Textured MoSi2 thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi2 single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperatures, the MR of the textured thin films show weak anti-localization behaviour owing to the spin orbit coupling effects. Our first principle calculation show the presence of surface states in this material. The resistivity of all the MoSi2 thin films is significantly low and nearly independent of the temperature, which is important for electronic devices.

KW - Magnetoresistance

KW - MoSi

KW - Spin-orbit coupling

KW - Surface states

KW - Weak anti-localization

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U2 - 10.1016/j.jallcom.2020.157670

DO - 10.1016/j.jallcom.2020.157670

M3 - Article

AN - SCOPUS:85093975391

SN - 0925-8388

VL - 858

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 157670

ER -

Magneto-transport and electronic structures in MoSi₂ bulks and thin films with different orientations

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Keywords

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ARC Centre of Excellence in Future Low-energy Electronics Technologies

Cite this

Magneto-transport and electronic structures in MoSi2 bulks and thin films with different orientations

Abstract

Keywords

Access to Document

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Projects

ARC Centre of Excellence in Future Low-energy Electronics Technologies

Cite this

Magneto-transport and electronic structures in MoSi₂ bulks and thin films with different orientations