Low-temperature selective-area deposition of metals: Chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)

M. M. Banaszak Holl, P. F. Seidler, S. P. Kowalczyk, F. R. McFeely

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Abstract

Chemical vapor deposition of high purity gold is demonstrated using ethyl(trimethylphosphine)gold(I) at temperatures as low as room temperature. Total selectivity for growth on atomically clean metallic surfaces in the presence of insulating surfaces is found over a ∼200°C temperature range and confirmed with scanning electron microscopy and x-ray photoelectron spectroscopy. A key processing parameter is shown to be ultrahigh vacuum, particularly for growth on reactive metals such as chromium. These results suggest low-temperature selectivity can be extended to other known precursors.

Original languageEnglish
Pages (from-to)1475-1477
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number13
DOIs
Publication statusPublished - 1 Dec 1993
Externally publishedYes

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