Low-temperature selective-area deposition of metals: Chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)

M. M. Banaszak Holl; P. F. Seidler; S. P. Kowalczyk; F. R. McFeely

doi:10.1063/1.108663

Low-temperature selective-area deposition of metals: Chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)

M. M. Banaszak Holl, P. F. Seidler, S. P. Kowalczyk, F. R. McFeely

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Abstract

Chemical vapor deposition of high purity gold is demonstrated using ethyl(trimethylphosphine)gold(I) at temperatures as low as room temperature. Total selectivity for growth on atomically clean metallic surfaces in the presence of insulating surfaces is found over a ∼200°C temperature range and confirmed with scanning electron microscopy and x-ray photoelectron spectroscopy. A key processing parameter is shown to be ultrahigh vacuum, particularly for growth on reactive metals such as chromium. These results suggest low-temperature selectivity can be extended to other known precursors.

Original language	English
Pages (from-to)	1475-1477
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	13
DOIs	https://doi.org/10.1063/1.108663
Publication status	Published - 1 Dec 1993
Externally published	Yes

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@article{0ae12f80d63e47bea5468ac2ff03e940,

title = "Low-temperature selective-area deposition of metals: Chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)",

abstract = "Chemical vapor deposition of high purity gold is demonstrated using ethyl(trimethylphosphine)gold(I) at temperatures as low as room temperature. Total selectivity for growth on atomically clean metallic surfaces in the presence of insulating surfaces is found over a ∼200°C temperature range and confirmed with scanning electron microscopy and x-ray photoelectron spectroscopy. A key processing parameter is shown to be ultrahigh vacuum, particularly for growth on reactive metals such as chromium. These results suggest low-temperature selectivity can be extended to other known precursors.",

author = "{Banaszak Holl}, {M. M.} and Seidler, {P. F.} and Kowalczyk, {S. P.} and McFeely, {F. R.}",

year = "1993",

month = dec,

day = "1",

doi = "10.1063/1.108663",

language = "English",

volume = "62",

pages = "1475--1477",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Low-temperature selective-area deposition of metals

T2 - Chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)

AU - Banaszak Holl, M. M.

AU - Seidler, P. F.

AU - Kowalczyk, S. P.

AU - McFeely, F. R.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - Chemical vapor deposition of high purity gold is demonstrated using ethyl(trimethylphosphine)gold(I) at temperatures as low as room temperature. Total selectivity for growth on atomically clean metallic surfaces in the presence of insulating surfaces is found over a ∼200°C temperature range and confirmed with scanning electron microscopy and x-ray photoelectron spectroscopy. A key processing parameter is shown to be ultrahigh vacuum, particularly for growth on reactive metals such as chromium. These results suggest low-temperature selectivity can be extended to other known precursors.

AB - Chemical vapor deposition of high purity gold is demonstrated using ethyl(trimethylphosphine)gold(I) at temperatures as low as room temperature. Total selectivity for growth on atomically clean metallic surfaces in the presence of insulating surfaces is found over a ∼200°C temperature range and confirmed with scanning electron microscopy and x-ray photoelectron spectroscopy. A key processing parameter is shown to be ultrahigh vacuum, particularly for growth on reactive metals such as chromium. These results suggest low-temperature selectivity can be extended to other known precursors.

UR - http://www.scopus.com/inward/record.url?scp=3342974875&partnerID=8YFLogxK

U2 - 10.1063/1.108663

DO - 10.1063/1.108663

M3 - Article

AN - SCOPUS:3342974875

SN - 0003-6951

VL - 62

SP - 1475

EP - 1477

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Low-temperature selective-area deposition of metals: Chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)

Abstract

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