Substrate-selective, low-temperature chemical vapor deposition of high quality gold films was obtained with the new precursor ethyl(trimethylphosphine)gold(I) in an ultrahigh vacuum reactor designed to handle wafers up to 3 inches in diameter. Growth behavior at temperatures as low as room temperature as well as substrate pre-cleaning procedures are presented. Activation energies of 35.1±0.4 kcal mol-1 and 18.3±0.7 kcal mol-1 were found for growth of gold films on gold and copper substrates, respectively.
|Number of pages||6|
|Journal||Materials Research Society Symposium Proceedings|
|Publication status||Published - 1 Jan 1993|
Seidler, P. F., Kowalczyk, S. P., Holl, M. M. B., Yurkas, J. J., Norcott, M. H., & McFeely, F. R. (1993). Low temperature selective area chemical vapor deposition of gold films: Growth and characterization. Materials Research Society Symposium Proceedings, 282, 359-364.