Low temperature selective area chemical vapor deposition of gold films: Growth and characterization

Paul F. Seidler, Steven P. Kowalczyk, Mark M.Banaszak Holl, John J. Yurkas, Maurice H. Norcott, F. Read McFeely

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Abstract

Substrate-selective, low-temperature chemical vapor deposition of high quality gold films was obtained with the new precursor ethyl(trimethylphosphine)gold(I) in an ultrahigh vacuum reactor designed to handle wafers up to 3 inches in diameter. Growth behavior at temperatures as low as room temperature as well as substrate pre-cleaning procedures are presented. Activation energies of 35.1±0.4 kcal mol-1 and 18.3±0.7 kcal mol-1 were found for growth of gold films on gold and copper substrates, respectively.
Original languageEnglish
Pages (from-to)359-364
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume282
Publication statusPublished - 1 Jan 1993

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