Long term stability and quality factors of degenerately n-type doped silicon resonators

Antti Jaakkola, Sergey Gorelick, Mika Prunnila, James Dekker, Tuomas Pensala, Panu Pekko

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

Abstract

Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1×1019cm-3. Quality factors of ~10-MHz Lamé mode resonators on wafers doped up to a concentration of 7.5 × 1019cm-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels.

Original languageEnglish
Title of host publication2014 IEEE International Frequency Control Symposium Proceedings
Place of PublicationPiscataway, New Jersey
PublisherIEEE, Institute of Electrical and Electronics Engineers
Number of pages5
ISBN (Print)9781479949168
DOIs
Publication statusPublished - 1 Jan 2014
Externally publishedYes
Event2014 IEEE International Frequency Control Symposium - Taipei, Taiwan
Duration: 19 May 201422 May 2014

Conference

Conference2014 IEEE International Frequency Control Symposium
Abbreviated titleIFCS 2014
CountryTaiwan
CityTaipei
Period19/05/1422/05/14

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