Long term stability and quality factors of degenerately n-type doped silicon resonators

Antti Jaakkola; Sergey Gorelick; Mika Prunnila; James Dekker; Tuomas Pensala; Panu Pekko

doi:10.1109/FCS.2014.6859866

Long term stability and quality factors of degenerately n-type doped silicon resonators

Antti Jaakkola, Sergey Gorelick, Mika Prunnila, James Dekker, Tuomas Pensala, Panu Pekko

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

1 Citation (Scopus)

Abstract

Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1×10¹⁹cm^-3. Quality factors of ~10-MHz Lamé mode resonators on wafers doped up to a concentration of 7.5 × 10¹⁹cm^-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels.

Original language	English
Title of host publication	2014 IEEE International Frequency Control Symposium Proceedings
Place of Publication	Piscataway, New Jersey
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Number of pages	5
ISBN (Print)	9781479949168
DOIs	https://doi.org/10.1109/FCS.2014.6859866
Publication status	Published - 1 Jan 2014
Externally published	Yes
Event	2014 IEEE International Frequency Control Symposium - Taipei, Taiwan Duration: 19 May 2014 → 22 May 2014

Conference

Conference	2014 IEEE International Frequency Control Symposium
Abbreviated title	IFCS 2014
Country/Territory	Taiwan
City	Taipei
Period	19/05/14 → 22/05/14

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10.1109/FCS.2014.6859866

Cite this

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title = "Long term stability and quality factors of degenerately n-type doped silicon resonators",

abstract = "Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1×1019cm-3. Quality factors of ~10-MHz Lam{\'e} mode resonators on wafers doped up to a concentration of 7.5 × 1019cm-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels.",

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booktitle = "2014 IEEE International Frequency Control Symposium Proceedings",

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Jaakkola, A, Gorelick, S, Prunnila, M, Dekker, J, Pensala, T & Pekko, P 2014, Long term stability and quality factors of degenerately n-type doped silicon resonators. in 2014 IEEE International Frequency Control Symposium Proceedings., 6859866, IEEE, Institute of Electrical and Electronics Engineers, Piscataway, New Jersey, 2014 IEEE International Frequency Control Symposium, Taipei, Taiwan, 19/05/14. https://doi.org/10.1109/FCS.2014.6859866

Long term stability and quality factors of degenerately n-type doped silicon resonators. / Jaakkola, Antti; Gorelick, Sergey; Prunnila, Mika et al.
2014 IEEE International Frequency Control Symposium Proceedings. Piscataway, New Jersey: IEEE, Institute of Electrical and Electronics Engineers, 2014. 6859866.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Research › peer-review

TY - GEN

T1 - Long term stability and quality factors of degenerately n-type doped silicon resonators

AU - Jaakkola, Antti

AU - Gorelick, Sergey

AU - Prunnila, Mika

AU - Dekker, James

AU - Pensala, Tuomas

AU - Pekko, Panu

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1×1019cm-3. Quality factors of ~10-MHz Lamé mode resonators on wafers doped up to a concentration of 7.5 × 1019cm-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels.

AB - Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1×1019cm-3. Quality factors of ~10-MHz Lamé mode resonators on wafers doped up to a concentration of 7.5 × 1019cm-3 were found to range from 900,000 to 1,500,000, which is comparable to that reported for similar resonators with moderate doping. The results indicate that the effect from heavy phosphorus doping on resonator stability or on silicon intrinsic losses is low at the studied doping levels.

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SN - 9781479949168

BT - 2014 IEEE International Frequency Control Symposium Proceedings

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - Piscataway, New Jersey

T2 - 2014 IEEE International Frequency Control Symposium

Y2 - 19 May 2014 through 22 May 2014

ER -

Long term stability and quality factors of degenerately n-type doped silicon resonators

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