Localization in single-walled carbon nanotubes

M. S. Fuhrer, Marvin L. Cohen, A. Zettl, Vincent Crespi

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50 Citations (Scopus)

Abstract

We demonstrate that in low temperature semiconductor-like regions the electrical resistance of single-walled carbon nanotube mats is highly nonlinear with a temperature-dependent threshold field for the onset of nonohmic conduction. The modest applied electric field completely suppresses the upturn in resistance and recovers metallic behavior over the entire temperature range 2.2 K < T < 300 K. The transport data indicate low-temperature localization of charge carriers arise from disorder on the nanotube bundles themselves and not from granularity casued by weak interbundle connections. The temperature-independent localization radius a is determined to be approximately 330 nm.

Original languageEnglish
Pages (from-to)105-109
Number of pages5
JournalSolid State Communications
Volume109
Issue number2
DOIs
Publication statusPublished - 14 Dec 1998
Externally publishedYes

Keywords

  • A. Fullerenes
  • D. Electronic states (localized)
  • D. Electronic transport

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