Liquid metal doping induced asymmetry in two-dimensional metal oxides

Mohammad B. Ghasemian, Ali Zavabeti, Francois-Marie Allioux, Pankaj Sharma, Maedehsadat Mousavi, Md Arifur Rahim, Rasoul Khayyam Nekouei, Jianbo Tang, Andrew J. Christofferson, Nastaran Meftahi, Somayeh Rafiezadeh, Soshan Cheong, Pramod Koshy, Richard D. Tilley, Chris F. McConville, Salvy P. Russo, Cuong Ton-That, Jan Seidel, Kourosh Kalantar-Zadeh

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)

Abstract

The emergence of ferroelectricity in two-dimensional (2D) metal oxides is a topic of significant technological interest; however, many 2D metal oxides lack intrinsic ferroelectric properties. Therefore, introducing asymmetry provides access to a broader range of 2D materials within the ferroelectric family. Here, the generation of asymmetry in 2D SnO by doping the material with Hf0.5Zr0.5O2 (HZO) is demonstrated. A liquid metal process as a doping strategy for the preparation of 2D HZO-doped SnO with robust ferroelectric characteristics is implemented. This technology takes advantage of the selective interface enrichment of molten Sn with HZO crystallites. Molecular dynamics simulations indicate a strong tendency of Hf and Zr atoms to migrate toward the surface of liquid metal and embed themselves within the growing oxide layer in the form of HZO. Thus, the liquid metal-based harvesting/doping technique is a feasible approach devised for producing novel 2D metal oxides with induced ferroelectric properties, represents a significant development for the prospects of random-access memories.

Original languageEnglish
Article number2309924
Number of pages12
JournalSmall
Volume20
Issue number27
DOIs
Publication statusPublished - 4 Jul 2024
Externally publishedYes

Keywords

  • atomically thin
  • doping
  • HZO
  • liquid metal
  • SnO

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