Level anticrossing of impurity states in semiconductor nanocrystals

Anvar S Baimuratov, Ivan Rukhlenko, Vadim K Turkov, Irina O Ponomareva, Mikhail Yu Leonov, Tatiana S Perova, Kevin Berwick, Alexander V Baranov, Anatoly V Fedorov

Research output: Contribution to journalArticleResearchpeer-review

19 Citations (Scopus)

Abstract

The size dependence of the quantized energies of elementary excitations is an essential feature of quantum nanostructures, underlying most of their applications in science and technology. Here we report on a fundamental property of impurity states in semiconductor nanocrystals that appears to have been overlooked?the anticrossing of energy levels exhibiting different size dependencies. We show that this property is inherent to the energy spectra of charge carriers whose spatial motion is simultaneously affected by the Coulomb potential of the impurity ion and the confining potential of the nanocrystal. The coupling of impurity states, which leads to the anticrossing, can be induced by interactions with elementary excitations residing inside the nanocrystal or an external electromagnetic field. We formulate physical conditions that allow a straightforward interpretation of level anticrossings in the nanocrystal energy spectrum and an accurate estimation of the states? coupling strength.
Original languageEnglish
Pages (from-to)1 - 6
Number of pages6
JournalScientific Reports
Volume4
DOIs
Publication statusPublished - 2014

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