Large-scale integrated optics using tripleXtm waveguide technology: From UV to IR

René Heidemana, Arne Leinse, Willem Hoving, Ronald Dekker, Douwe Geuzebroek, Edwin Klein, Remco Stoffer, Chris Roeloffzen, Leimeng Zhuang, Arjan Meijerink

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

34 Citations (Scopus)

Abstract

We present a new class of low-loss integrated optical waveguide structures as CMOS-compatible industrial standard for photonic integration on silicon or glass. A TriPleXTM waveguide is basically formed by a -preferably rectangular- silicon nitride (Si3N4) shell filled with and encapsulated by silicon dioxide (SiO2). The constituent materials are low-cost stoichiometric LPVCD end products which are very stable in time. Modal characteristics, birefringence, footprint size and insertion loss are controlled by design of the geometry. Several examples of new applications will be presented to demonstrate its high potential for large-scale integrated optical circuits for telecommunications, sensing and visible light applications.

Original languageEnglish
Title of host publicationPhotonics Packaging, Integration, and Interconnects IX
Volume7221
DOIs
Publication statusPublished - 2009
Externally publishedYes
EventPhotonics Packaging, Integration, and Interconnects IX - San Jose, CA, United States of America
Duration: 26 Jan 200928 Jan 2009

Conference

ConferencePhotonics Packaging, Integration, and Interconnects IX
CountryUnited States of America
CitySan Jose, CA
Period26/01/0928/01/09

Keywords

  • Birefringence
  • CMOS compatible
  • integrated optics
  • IR
  • low loss
  • Multilayer waveguides
  • Optical waveguides
  • PLCs
  • UV
  • Visible

Cite this

Heidemana, R., Leinse, A., Hoving, W., Dekker, R., Geuzebroek, D., Klein, E., Stoffer, R., Roeloffzen, C., Zhuang, L., & Meijerink, A. (2009). Large-scale integrated optics using tripleXtm waveguide technology: From UV to IR. In Photonics Packaging, Integration, and Interconnects IX (Vol. 7221). [72210R] https://doi.org/10.1117/12.808409