LACBED with quantitative anomalous absorption corrections

C. J. Rossouw, P. R. Miller, L. J. Allen

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Abstract

Kinematic mean free paths for thermal diffuse scattering of electrons are shown. As a function of temperature T and incident beam energy E0 for silicon and GaAs. For experimental and calculated 〈001〉 LACBEDs for silicon and GaAs are also shown. Differences within the central region for GaAs compared with Si are caused by the presence of Brillouin zone (BZ) boundaries due to additional {200} difference reflections. Experimental and calculated 〈111〉 LACBEDs, similar contrast is apparent for silicon and GaAs. These and other results are discussed in terms of the Einstein and α models.

Original languageEnglish
Title of host publicationProceedings, Annual Conference - Microbeam Analysis Society
Pages337-340
Number of pages4
Publication statusPublished - 1 Dec 1990
Externally publishedYes
EventProceedings of the 25th Annual Conference of the Microbeam Analysis Society presented at the 12th International Congress for Electron Microscopy - Seattle, WA, USA
Duration: 12 Aug 199018 Aug 1990

Conference

ConferenceProceedings of the 25th Annual Conference of the Microbeam Analysis Society presented at the 12th International Congress for Electron Microscopy
CitySeattle, WA, USA
Period12/08/9018/08/90

Cite this

Rossouw, C. J., Miller, P. R., & Allen, L. J. (1990). LACBED with quantitative anomalous absorption corrections. In Proceedings, Annual Conference - Microbeam Analysis Society (pp. 337-340)