Abstract
Kinematic mean free paths for thermal diffuse scattering of electrons are shown. As a function of temperature T and incident beam energy E0 for silicon and GaAs. For experimental and calculated 〈001〉 LACBEDs for silicon and GaAs are also shown. Differences within the central region for GaAs compared with Si are caused by the presence of Brillouin zone (BZ) boundaries due to additional {200} difference reflections. Experimental and calculated 〈111〉 LACBEDs, similar contrast is apparent for silicon and GaAs. These and other results are discussed in terms of the Einstein and α models.
| Original language | English |
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| Title of host publication | Proceedings, Annual Conference - Microbeam Analysis Society |
| Pages | 337-340 |
| Number of pages | 4 |
| Publication status | Published - 1 Dec 1990 |
| Externally published | Yes |
| Event | Proceedings of the 25th Annual Conference of the Microbeam Analysis Society presented at the 12th International Congress for Electron Microscopy - Seattle, WA, USA Duration: 12 Aug 1990 → 18 Aug 1990 |
Conference
| Conference | Proceedings of the 25th Annual Conference of the Microbeam Analysis Society presented at the 12th International Congress for Electron Microscopy |
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| City | Seattle, WA, USA |
| Period | 12/08/90 → 18/08/90 |